Structural Stability of Hydrogen Forming Gas Annealed  ( Ba , Sr ) RuO₃ Oxide Electrodes

Abstract

͑Ba,Sr͒RuO 3 ͑BSR͒ electrodes were deposited onto Si͑100͒ substrates by liquid delivery metallorganic chemical vapor deposition and investigated for stability under hydrogen forming condition. The BSR films showed structural and morphological stability in hydrogen forming gas ͑4% H 2 /balance N 2 ͒ anneal up to 500°C. The abrupt increase of resistivity with increasing hydrogen anneal temperature was attributed to the oxygen loss in BSR films without phase change and was completely recovered by annealing at 700°C in O 2 ambient. The BSR electrodes, with structural and morphological stability in hydrogen forming gas anneal conditions at high temperature, are suitable for integration of high dielectric constant materials.

On the suppression of hydrogen degradation in PbZr0.4Ti0.6O3 ferroelectric capacitors with PtOx top electrode

“…5 The forming gas annealing is required to passivate the device and eliminate defects at the transistor interface. [8][9][10] Although the hydrogen degradation can be reduced by using conductingoxide electrodes, such as La 0.5 Sr 0.5 CoO 3 , 11 SrRuO 3 , 12 and ͑Ba, Sr͒RuO 3 , 13 patterning the above oxide electrodes by dry etching technique is troublesome and the use of them also gives a high leakage current. The degradation by forming gas annealing leads to the loss of polarization in ferroelectric capacitors, which is related to the catalytic characteristic of electrode material, especially Pt, 6,7 in dissociation of the hydrogen molecule into atoms.…”