Al 2 O 3 was deposited on In 0.15 Ga 0.85 As/ GaAs using atomic-layer deposition ͑ALD͒. Without any surface preparation or postthermal treatment, excellent electrical properties of Al 2 O 3 / InGaAs/ GaAs heterostructures were obtained, in terms of low electrical leakage current density ͑10 −8 to 10 −9 A/cm 2 ͒ and low interfacial density of states ͑D it ͒ in the range of 10 12 cm −2 eV −1. The interfacial reaction and structural properties studied by high-resolution x-ray photoelectron spectroscopy ͑HRXPS͒ and high-resolution transmission electron microscopy ͑HRTEM͒. The depth profile of HRXPS, using synchrotron radiation beam and low-energy Ar + sputtering, exhibited no residual arsenic oxides at interface. The removal of the arsenic oxides from Al 2 O 3 / InGaAs heterostructures during the ALD process ensures the Fermi-level unpinning, which was observed in the capacitance-voltage measurements. The HRTEM shows sharp transition from amorphous oxide to single crystalline semiconductor.

A series of titanate-based layered perovskites having large values of the spontaneous polarization P(s) were developed for their applcations to nonvolatile ferroelectric random access memories. Among these, the Nd-modified bismuth titanate [Bi(4-x)Nd(x)Ti(3)O(12) (BNdT)] system exhibited the most remarkable ferroelectric properties. The c-axis oriented BNdT capacitor was characterized by a switchable remanent polarization 2P(r) of over 100 microC/cm(2) and imprinting and fatigue-free behavior. The active Ti site responsible for the giant P(s) was identified with the help of Rietveld analysis, x-ray absorption near-edge structure study, and ab initio quantum computations.

Data from this retrospective analysis of a histologically uniform group of hemispheric AAs treated in the MR imaging era suggest that residual tumor volumes, as documented on postoperative imaging studies, may be a prognostic factor for TTP and OS for this patient population.

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