Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

Abstract

This paper examines the structural properties of gallium phosphide layers by high resolution x-ray diffraction and atomic force microscopy measurements. GaP layers are grown on misoriented and nominally exactly oriented silicon (001) substrates by metalorganic vapor phase epitaxy. Structural characterization is performed by reciprocal lattice map and transverse scan measurements of (00l)-reflections (l = 2, 4, 6). Transverse scan line profiles of GaP layers on exactly oriented and misoriented substrates are compared thoroughly and antiphase disorder related satellite peaks are observed on exactly oriented substrates. In addition, results imply that antiphase disorder is self-annihilated on misoriented substrates. The dependence of crystallographic tilt on growth temperature indicates structural coherence. Williamson-Hall-like plot of transverse scans reveals the lateral correlation length of crystalline defects of 79 nm which gives the average size of the mosaic crystallites. In addition, the mosaicity of the GaP layer is 0.042°.

Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction

“…5c ). This is expected because of the thermodynamically favored formation of bi-atomic steps on the Si substrates with a large (>4°) off-cut 51 , 52 preventing the formation of APDs in the GaP layers. The sample morphology derived from the EBSD pattern quality map is displayed in Fig.…”

Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)

“…As can be seen from the data for sample S1 with a single GaP epilayer, the broadened peak appears at a lower diffraction angle compared to Si(004) and can be attributed to (004) Bragg reflection of the pseudomorphic GaP layer. 46 Position of the GaP peak for most of the samples appears at a lower angle compared to relaxed GaP (004) (Θ = 68.853 deg. ), which indicates an increase of the interplanar distance of the GaP lattice in the [001] direction induced by in-plane compressive strain.…”

“…Beside the narrowest and brightest Si(004) reflex, one can find the broadened diffraction peaks corresponding to the epitaxial layers. As can be seen from the data for sample S1 with a single GaP epilayer, the broadened peak appears at a lower diffraction angle compared to Si(004) and can be attributed to (004) Bragg reflection of the pseudomorphic GaP layer . Position of the GaP peak for most of the samples appears at a lower angle compared to relaxed GaP (004) (Θ = 68.853 deg.…”