1995
DOI: 10.1016/0040-6090(94)05679-8
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Structural study of porous silicon

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Cited by 15 publications
(6 citation statements)
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“…This is consistent with a quantum confinement interpretation of the P L data [8]. Finally, TEM and SPM have both shown evidence for surface modifications in the NH,F : HF-based porous silicon, indicative of selective etching of Si(100) surfaces to produce Si(ll1) terminated regions [5].…”
Section: Microscopysupporting
confidence: 55%
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“…This is consistent with a quantum confinement interpretation of the P L data [8]. Finally, TEM and SPM have both shown evidence for surface modifications in the NH,F : HF-based porous silicon, indicative of selective etching of Si(100) surfaces to produce Si(ll1) terminated regions [5].…”
Section: Microscopysupporting
confidence: 55%
“…The near-edge (NEXAFS) region is very useful for characterisation of the chemical environments, LIMA data has also given evidence for the presence of silicon bonded to hydrogen and for silicon bonded to silicon in HF-etched porous silicon [4, 51, by comparison with data from standard samples of c-Si, a-Si, and SiO,. LIMA indicates the presence of many F-based species in the NH,F : HF-etched material : the reflected EXAFS of NH,F : HF-based porous Si contains several features in between the 'surface' and 'bulk' regions [5], additional to those characteristic of Si-Si and Si-0 bonded material. It has not been possible, however, to assign these features unambiguously.…”
Section: Local Structurementioning
confidence: 99%
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“…While much research has been focused on characterising electrochemically produced PS from Si wafers [9][10][11][12] little has been published on characterising the resulting pore structures and porosity of chemically etched Si particles. This is due to the ease at which pore structures in Si wafers can be achieved and tailored through electro-chemical etching [13] and the microscopical analysis and characterisation of the resultant material has been well documented [14].…”
Section: Successful Characterisation Of Ps Involves Using a Host Of Amentioning
confidence: 99%
“…Much experience has been accumulated on preparation of luminescent PS by this technique. 2 The generally accepted mechanism of anodization is shown in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%