We present an investigation into a new technique for producing luminescent porous silicon with controlled lateral microstructure. The process is based on the effect of laser‐assisted stain etching of silicon with hydrofluoric acid solution. With the further goal of preparing two‐dimensional periodical arrays of luminescent microdots, we studied the accuracy of the technique by etching single submillimetre structures with a low‐power laser. The size and exact position of the etched area are controlled by laser focusing and movement, respectively, with submillimetre accuracy. Samples exhibit orange luminescence when illuminated with UV or blue light.
We have studied the dependence of the efficiency of the luminescence, the structure and the rate of etching on parameters such as the HF concentration, the intensity and wavelength of illumination and the doping level of the silicon wafer. Optimization of the process parameters, and consistency with assumed mechanisms of luminescence and etching process, are discussed. © 1998 John Wiley & Sons, Ltd.