Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: strain, relaxation and lattice parameter

Abstract

ZnSe layers of various thickness were grown on (001) GaAs substrates, using InxGa1-xAs or Al1-xGaxAs as buffer layers by molecular beam epitaxy and were studied by high-resolution x-ray diffraction. The principal structural characteristics of ZnSe layer and buffer layer were determined using several reflections, such as (004) and two pairs of coupled asymmetric reflections, namely (224), (-2-24) and (115) (-1-15). In order to evaluate their validity, the experimental data obtained from these reflections were handled by means of two known expressions found in the literature. We have found the relaxation process of ZnSe layers is well described by a geometrical model including the thermal strain and small strain due to work hardening. The relaxation process is faster for ZnSe grown on ternary buffer layers despite the fact that, some buffer layers are pseudomorphically grown to the substrate; therefore we conclude that not only the lattice mismatches have effect on the relaxation process but also the surface state of the buffer layer has an influence in this process.

First principles studies of band structure and electronic properties of ZnSe

“…ZnSe (zincblende) is a II-VI semiconductor compound with a band gap of 2.70 eV [6]. Hence, it has played a prominent role in optoelectronic devices specifically, in the blue green region of the electromagnetic spectrum [7][8][9][10][11]. The electronic, transport and magnetic properties of the semiconductor compound have generated more interest in recent time due to the application of the compound in sprintonic [1].…”

Compton scattering study of ZnSe

“…ZnSe is a tetrahederally bonded IIB-VIA semiconductor compound with zinc-blende structure having large band gap of 2.68 eV. Therefore, it has been a suitable candidate for opto-electronic devices especially in the blue green region [1][2][3][4][5]. Recently, application of these materials in spintronics has added more interest on the electronic, magnetic as well as transport properties of the compound semiconductors [6].…”