Structural transformation in silicon by pulse heating

Александров, Л. Н.

doi:10.1016/0960-8974(92)90005-b

Cited by 7 publications

(1 citation statement)

References 84 publications

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“…[1][2][3][4] The other approaches include crystallization techniques after amorphous film growth, in which irradiation methods that use electron beams, ultraviolet excimer lasers, solid-state lasers, and thermal plasma jets have been intensively studied. [5][6][7][8][9][10][11] Recently, we have reported that, for the surfaces of oxidation-resistant elemental metals such as Ni, Pt, and Pd, exposure to remote H 2 plasma (H 2 -RP) causes a significant increase in surface temperature, which can be interpreted in terms of the transfer of heat generated by the surface recombination of atomic hydrogen on the metals. [12][13][14][15][16] This phenomenon is applicable to the local heating process, in which predetermined areas of films to be heated are covered with patterned metal films and irradiated to H 2 -RP.…”

Section: Introductionmentioning

confidence: 99%

Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization

Makihara¹,

Ikeda²,

Okada³

et al. 2014

Jpn. J. Appl. Phys.

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We demonstrated a novel technique for crystallizing >80-nm-thick hydrogenated amorphous Ge films (a-Ge:H) covered with Pt patterns with >2-nm-thick SiO 2 interlayers on quartz substrates by exposing them to remote H 2 plasma (H 2 -RP) without any external heating. After the samples were exposed to the H 2 -RP for 5 min, the crystallization of the whole film was confirmed in Raman scattering spectra, which implies that the exothermic recombination of hydrogen radicals generated in H 2 plasma on a Pt film surface plays an important role in improving the crystallinity caused by energy transfer through the SiO 2 interlayer. In the case without Pt coating and a SiO 2 interlayer, the a-Ge:H film was completely removed at an etching rate as high as >56 nm/min. We also studied the impact of H 2 -RP exposure of a-Ge:H directly covered with Pt on the germanidation reaction without any external heating. Raman scattering signals attributable to the Pt-Ge phase were observable within the first 1 min of H 2 -RP exposure. After exposure for 20 min, full germanidation of >80-nm-thick a-Ge:H was achieved, and its resultant sheet resistance was as low as >4.5 Ω/sq. The driving force of such a germanidation reaction is attributed to heat transfer caused by the efficient recombination of atomic hydrogen on the Pt surface.

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Section: Introductionmentioning

confidence: 99%

Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization

Makihara¹,

Ikeda²,

Okada³

et al. 2014

Jpn. J. Appl. Phys.

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Stresses and Dislocation Formation in Thin Films

Александров

Mitlina

Kostilov

et al. 1994

Phys. Stat. Sol. (a)

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Kinetics of Phase Transitions in Porous Materials

Александров

Novikov

1996

Phys. Stat. Sol. (a)

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The effect of pore radius on the shifts of melting temperature in amorphous and crystalline porous materials and on solid phase crystallization kinetics in amorphous materials is analysed. For the calculation of the free energy of porous silicon the surface free energy at the walls of pores is added to the free energy of bulk material known from empirical data. It is estimated that the temperature of the phase transition from amorphous to crystalline state is by 120 K lower and the melting temperature is by 200 K lower for porous Si (with pore size 1 nm) in comparison with bulk Si. The computer simulated structure of porous silicon was used to take into account the size and shape distribution of pores.

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Structural transformation in silicon by pulse heating

Cited by 7 publications

References 84 publications

Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization

Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization

Stresses and Dislocation Formation in Thin Films

Kinetics of Phase Transitions in Porous Materials

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