Structural transformations and silicon nanocrystallite formation in SiOx films

Bratus, V. Ya.; Yukhimchuk, V. A.; Berezhinsky, L. I.; Valakh, M. Ya.; Vorona, Igor; Индутный, И. З.; Petrenko, Taras; Shepeliavyi, P. E.; Yanchuk, I. B.

doi:10.1134/1.1385719

Cited by 44 publications

(15 citation statements)

References 25 publications

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“…Si bonding is tetrahedral and each of the four silicon bonds can be either bonded to an oxygen or a silicon atom. The RBM describes a network and does not consider that SiO may contain a rather high fraction (10 20 cm −3 ) of dangling bonds 9. In SiO condensation studies the formed bulk structure is a major topic, but also the onset of condensation at the interface to a certain substrate is important, since different kinds of interactions may affect bulk‐structure formation.…”

Section: Motivationmentioning

confidence: 99%

Vibrational spectroscopy of SiO on Si(111)

Klevenz

Wetzel

Trieloff

et al. 2010

phys. stat. sol. (b)

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The growth of ultrathin SiO layers on clean Si(111) was observed by in situ infrared spectroscopy under ultra-high vacuum conditions. SiO was deposited by thermal evaporation of SiO powder from a Knudsen cell. A large shift of the SiO main vibrational line, from about 864 cm À1 for sub-monolayer coverage up to the bulk value of SiO at about 982 cm À1 for thicknesses above 10 Å , was observed. The extraordinary low vibrational frequencies for species at the SiO-Si interface corroborate recently published theoretical results for SiO adsorption on Si and for the SiO 2 -Si interface.

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Section: Motivationmentioning

confidence: 99%

Vibrational spectroscopy of SiO on Si(111)

Klevenz

Wetzel

Trieloff

et al. 2010

phys. stat. sol. (b)

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“…The RBM describes a network and does not consider that SiO may contain a rather high fraction (10 20 cm −3 ) of dangling bonds. 20 Within the ICMM that considers deviations from the statistical distributions of the RBM, SiO is described as small nanometer-sized Si and SiO 2 clusters embedded in a SiO x ( x < 2) matrix, where the cluster size strongly depends on the degree of disproportionation.…”

Section: Introductionmentioning

confidence: 99%

The Temperature-Dependent Decomposition of SiO Studied by Infrared Vibrational Spectroscopy

et al. 2012

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The temperature dependence of vibrational bands in SiO films deposited onto Si was studied under ultra high vacuum conditions. In the first series of measurements, films were deposited at various substrate temperatures from 40 K to 573 K and infrared spectra were monitored in situ between 450 cm−1 and 5000 cm−1. In a second series of measurements, a film was deposited at 300 K and post-annealed to various temperatures ranging from 373 K to 1173 K. A shift of the strongest vibrational frequency of SiO by several 10 cm−1 to higher wavenumbers with increasing temperature was observed in both kinds of experiments. The observed spectral shifts are considered as an indication of changes in the frequency of occurrence of the various Si-SiyO4-y units (0 ⩽ y ⩽ 4).

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“…For example, in those parts of SiO 2 film where the stoichiometry is breaked, elementary silicon can arise at high temperatures. As shown in [4], high temperature annealing of SiO 2 non-stoichiometric films results in broad-band peak with maximum centered at 490 cm −1 , which may be attributed to Si-Si bond. This means that clusters of amorphous silicon are formed.…”

Section: Resultsmentioning

confidence: 85%