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Zhao, Zhao; Zeng, Qiaoshi; Zhang, Haijun; Wang, Shibing; Hirai, Shigeto; Zeng, Zhidan; Mao, Wendy L.

doi:10.1103/physrevb.91.184112

Cited by 18 publications

(33 citation statements)

References 54 publications

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“…3 ). Interestingly, the onset of this structural disorder lies at much lower pressures compared to Sb 2 Se 3 15 and Bi 2 S 3 31 , but close with that of α-Sb 2 O 3 44 . Such disorder can generally be accounted for by two mechanisms 45 : (a) the disordered phase may be a precursor of a structural transformation into another crystalline phase, which cannot be formed due to kinetic barriers, or (b) the tendency of the material to decompose into its constituents.…”

Section: Discussionmentioning

confidence: 72%

Structural properties of Sb2S3 under pressure: evidence of an electronic topological transition

Efthimiopoulos

Buchan

Wang

2016

Sci Rep

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High-pressure Raman spectroscopy and x-ray diffraction of Sb2S3 up to 53 GPa reveals two phase transitions at 5 GPa and 15 GPa. The first transition is evidenced by noticeable compressibility changes in distinct Raman-active modes, in the lattice parameter axial ratios, the unit cell volume, as well as in specific interatomic bond lengths and bond angles. By taking into account relevant results from the literature, we assign these effects to a second-order isostructural transition arising from an electronic topological transition in Sb2S3 near 5 GPa. Close comparison between Sb2S3 and Sb2Se3 up to 10 GPa reveals a slightly diverse structural behavior for these two compounds after the isostructural transition pressure. This structural diversity appears to account for the different pressure-induced electronic behavior of Sb2S3 and Sb2Se3 up to 10 GPa, i.e. the absence of an insulator-metal transition in Sb2S3 up to that pressure. Finally, the second high-pressure modification appearing above 15 GPa appears to trigger a structural disorder at ~20 GPa; full decompression from 53 GPa leads to the recovery of an amorphous state.

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Section: Discussionmentioning

confidence: 72%

Structural properties of Sb2S3 under pressure: evidence of an electronic topological transition

Efthimiopoulos

Buchan

Wang

2016

Sci Rep

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“…The tunnel structure of β-Bi 2 O 3 is ideal for the transfer of the photogenerated electrons and holes, preventing their excessive recombination and enabling more free carriers to participate in the photodecomposition process [24]. In this respect, it is worth mentioning that the recent observation of the β-Bi 2 O 3 phase in compressed α-Sb 2 O 3 [25] could lead to the stabilization of this phase in Sb 2 O 3 , thus leading to novel catalytic properties of this Sb-related compound because Sb has a more active LEP than Bi in β-Bi 2 O 3 . Therefore, an understanding of the properties of β-Bi 2 O 3 is of primary importance for its own technological applications and those of related compounds.…”

Section: Introductionmentioning

confidence: 99%

β−Bi2O3under compression: Optical and elastic properties and electron density topology analysis

et al. 2016

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We report a joint experimental and theoretical study of the optical properties of tetragonal bismuth oxide (β-Bi 2 O 3 ) at high pressure by means of optical absorption measurements combined with ab initio electronic band structure calculations. Our results are consistent with previous results that show the presence of a second-order isostructural phase transition in Bi 2 O 3 (from β to β ) around 2 GPa and a phase transition above 15 GPa combined with a pressure-induced amorphization above 17-20 GPa. In order to further understand the pressure-induced phase transitions and amorphization occurring in β-Bi 2 O 3 , we theoretically studied the mechanical and dynamical stability of the tetragonal structures of β-and β -Bi 2 O 3 at high pressure through calculations of their elastic constants, elastic stiffness coefficients, and phonon dispersion curves. The pressure dependence of the elastic stiffness coefficients and phonon dispersion curves confirms that the isostructural phase transition near 2 GPa is of ferroelastic nature. Furthermore, a topological study of the electron density shows that the ferroelastic transition is not caused by a change in number of critical points (cusp catastrophe), but by the equalization of the electron densities of both independent O atoms in the unit cell due to a local rise in symmetry. Finally, from theoretical simulations, β -Bi 2 O 3 is found to be mechanically and dynamically stable at least up to 26.7 GPa under hydrostatic conditions; thus, the pressure-induced amorphization reported above 17-20 GPa in powder β -Bi 2 O 3 using methanol-ethanol-water as pressure-transmitting medium could be related to the frustration of a reconstructive phase transition at room temperature and the presence of mechanical or dynamical instabilities under nonhydrostatic conditions.

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“…Despite the broad interest on Cr 2 S 3 , few previous experimental and theoretical results can be referred on the structural and electrical transportation information under high pressure. Most structure studies under high pressure have been devoted to A 2 X 3 -type transition metal sesquioxides compared to chalcogenides, [11][12][13][14][15][16][17][18] due to their vital application in the process of ceramics as additives, grain growth inhibitors, and phase stabilizers. 19 Cr 2 O 3 , which is isoelectronic with Cr 2 S 3 , was found absent of structural phase transition to 10 GPa (Refs.…”

Section: Introductionmentioning

confidence: 99%

Correlated structural and electronic phase transformations in transition metal chalcogenide under high pressure

et al. 2016

Journal of Applied Physics

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Here, we report comprehensive studies on the high-pressure structural and electrical transport properties of the layered transition metal chalcogenide (Cr 2 S 3) up to 36.3 GPa. A structural phase transition was observed in the rhombohedral Cr 2 S 3 near 16.5 GPa by the synchrotron angle dispersive X-ray diffraction measurement using a diamond anvil cell. Through in situ resistance measurement, the electric resistance value was detected to decrease by an order of three over the pressure range of 7-15 GPa coincided with the structural phase transition. Measurements on the temperature dependence of resistivity indicate that it is a semiconductor-to-metal transition in nature. The results were also confirmed by the electronic energy band calculations. Above results may shed a light on optimizing the performance of Cr 2 S 3 based applications under extreme conditions.

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Structural transition and amorphization in compressedα−Sb2O3

Cited by 18 publications

References 54 publications

Structural properties of Sb2S3 under pressure: evidence of an electronic topological transition

Structural properties of Sb2S3 under pressure: evidence of an electronic topological transition

β−Bi2O3under compression: Optical and elastic properties and electron density topology analysis

Correlated structural and electronic phase transformations in transition metal chalcogenide under high pressure

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