2021
DOI: 10.1039/d0cp06417c
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Structural, vibrational and electronic properties of α′-Ga2S3 under compression

Abstract: We report a joint experimental and theoretical study of the low-pressure phase of α′-Ga2S3 under compression. The structural, vibrational, topological and electronic properties have been evaluated to reveal the relevance of the vacancy channels and the single and double lone electron pairs in the pressure behaviour of this system.

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Cited by 9 publications
(26 citation statements)
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“…In general, there is a good agreement between the experimental and theoretical results on structural, vibrational, and optical properties as far as pressure-induced disorder is not crucial in the LP range. The excellent agreement of experimental and theoretical results allowed us to discuss the lattice dynamical properties of these semiconductors [8][9][10]12,13] in analogy with zincblende-type semiconductors (see Figure 2). The lack of agreement between the experimental and theoretical pressure dependence of the direct bandgap energy above certain pressure has allowed us to discuss the ranges of the pressure-induced disorder process that OVCs undergo prior to their transformation to the disorder rocksalt structure at HP (in analogy with zincblende-type semiconductors).…”
Section: Ordered-vacancy Compoundsmentioning
confidence: 74%
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“…In general, there is a good agreement between the experimental and theoretical results on structural, vibrational, and optical properties as far as pressure-induced disorder is not crucial in the LP range. The excellent agreement of experimental and theoretical results allowed us to discuss the lattice dynamical properties of these semiconductors [8][9][10]12,13] in analogy with zincblende-type semiconductors (see Figure 2). The lack of agreement between the experimental and theoretical pressure dependence of the direct bandgap energy above certain pressure has allowed us to discuss the ranges of the pressure-induced disorder process that OVCs undergo prior to their transformation to the disorder rocksalt structure at HP (in analogy with zincblende-type semiconductors).…”
Section: Ordered-vacancy Compoundsmentioning
confidence: 74%
“…We have published some joint experimental and theoretical studies on structural, vibrational, and optical properties of adamantine OVCs under compression [7][8][9][10][11][12][13][14]. In general, there is a good agreement between the experimental and theoretical results on structural, vibrational, and optical properties as far as pressure-induced disorder is not crucial in the LP range.…”
Section: Ordered-vacancy Compoundsmentioning
confidence: 86%
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“…For the sake of clarity, only the most intense Raman mode, the A′(6), of α′-Ga 2 S 3 is marked in panel a. The reader is referred to our previous work (ref ) for further information about the pressure dependence of the Raman-active modes of α′-Ga 2 S 3 . All the observed Raman-active modes have been labeled in β′-Ga 2 S 3 and φ-Ga 2 S 3 .…”
Section: Resultsmentioning
confidence: 99%
“…X-ray diffraction (XRD) measurements under compression showed a PT to β-In 2 Se 3 -like ( R -3 m ) Ga 2 S 3 (hereinafter, β′-Ga 2 S 3 ) around 16 GPa, being the PT assisted by laser heating (LH) . However, a PT was found at similar pressures at RT in a study of the structural and vibrational properties of α′-Ga 2 S 3 at HP, i.e., without the need of LH . Similarly, Raman scattering (RS) measurements at RT observed a PT at 11.3 (17.2 GPa) with (and without) He as a pressure-transmitting medium (PTM) .…”
Section: Introductionmentioning
confidence: 99%