Structure and chemical composition of fluorinated SiO2 films deposited using SiF4/O2 plasmas

Han, Sang M.; Aydil, Eray S.

doi:10.1116/1.580845

Cited by 62 publications

(18 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5c) relative to the 7 Â 7 surface (885 cm À1 , Fig. 1d) could be attributed to the coupling of Si-O x (x ¼ 1; 2) vibrations to the existing Si-C and Si-F x stretching modes [35].…”

Section: Eels Spectra Of Ion Irradiation Of Vitreous Sio 2 Surface Inmentioning

confidence: 92%

Vibrational electron energy loss studies of surface processes on Si(111)7×7 and vitreous SiO2 ion-mediated in CF4 and CH2F2

Leung

2003

Surface Science

View full text Add to dashboard Cite

The surface species produced on Si(1 1 1)7 Â 7 and vitreous SiO 2 surfaces by ion irradiation in CF 4 and in CH 2 F 2 at 50 eV impact energy have been investigated by electron energy loss spectroscopy (EELS), thermal desorption spectrometry (TDS) and low energy electron diffraction (LEED). In particular, the reaction layer for Si(1 1 1)7 Â 7 ionirradiated in CF 4 is characterized by the presence of Si-C stretching, Si-F x (x ¼ 1-3) stretching and bending modes, while ion irradiation in CH 2 F 2 introduces additional C-H stretching mode. For both cases, the absence of C-F stretching feature in the corresponding EELS spectra indicates that CF x (x ¼ 1-3) surface species do not present in any appreciable amount. These EELS results are consistent with the TDS data, which shows that SiF 4 is the major desorption product and desorption products such as CF x (x ¼ 1-3) are not observed. Ion irradiation of Si(1 1 1)7 Â 7 in CF 4 or CH 2 F 2 at low impact energy therefore produces SiC and SiF x (x ¼ 1-3) as the primary surface products, while additional CH species is found in the latter case of ion-irradiation in CH 2 F 2 . When the oxidized surface instead of the 7 Â 7 surface of Si (1 1 1) is used as the substrate, ion irradiation by the same dose of fluorocarbon ions appears to enhance the deposition of SiF x but reduce the amount of SiC species, which provides evidence for recombination reaction of surface O with surface C to form gaseous CO or CO 2 , leaving behind more F to interact with the Si substrate atoms. The corresponding TDS data suggests that the OCF radical may also be one of the minor desorption products.

show abstract

“…5c) relative to the 7 Â 7 surface (885 cm À1 , Fig. 1d) could be attributed to the coupling of Si-O x (x ¼ 1; 2) vibrations to the existing Si-C and Si-F x stretching modes [35].…”

Section: Eels Spectra Of Ion Irradiation Of Vitreous Sio 2 Surface Inmentioning

confidence: 92%

Vibrational electron energy loss studies of surface processes on Si(111)7×7 and vitreous SiO2 ion-mediated in CF4 and CH2F2

Leung

2003

Surface Science

View full text Add to dashboard Cite

show abstract

“…Research performed by Han et al and Yoshimaru et al and agreed upon by Lucovsky et al determined the Si-O-Si bond anglerelaxes due to the presence of fluorine incorporated into the microstructure which in turn shifts this peak to a higher wavenumber[7,8,15].…”

mentioning

confidence: 74%

“…The peak assignments are tabulated in Table 1 [7,8,[15][16][17][18][19]. The Si-O-Si peak due to asymmetrical stretching is present at about 1085 cm À1 .…”

Section: Ftir Determination By Atr Methodsmentioning

confidence: 99%

“…This precursor is of interest because of the inherent fluorine present in this material. Fluorinated SiO 2 (FSG) has been documented to have a lower dielectric constant than unfluorinated SiO 2 deposited by plasma enhanced chemical vapor deposition from SiF 4 , O 2 gases and TEFS precursor due to changes in Si-O-Si bonding [7][8][9]. The purpose of this investigation is to examine the impact of processing conditions on the chemical and dielectric properties of triethoxysilane-based aerogels.…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Dielectric behavior of triethoxyfluorosilane aerogels

Roepsch

Gorman

Mueller

et al. 2004

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

“…In the last few years considerable research efforts have been focused on some aspects which are still unsolved [4][5][6][7][8][9][10][11]. To give answers to the scientific questions and to achieve the technological goals, many experiments have been carried out by acting on the macroscopic and microscopic plasma parameters [2,4,7,12]. However, few studies address plasma-surface reactions occurring during processing [4].…”

Section: Introductionmentioning

confidence: 99%

Deposition of amorphous fluorosilane thin film on silicon surface: Atomic simulation

Gou

Sun

et al. 2007

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Structure and chemical composition of fluorinated SiO2 films deposited using SiF4/O2 plasmas

Cited by 62 publications

References 57 publications

Vibrational electron energy loss studies of surface processes on Si(111)7×7 and vitreous SiO2 ion-mediated in CF4 and CH2F2

Vibrational electron energy loss studies of surface processes on Si(111)7×7 and vitreous SiO2 ion-mediated in CF4 and CH2F2

Dielectric behavior of triethoxyfluorosilane aerogels

Deposition of amorphous fluorosilane thin film on silicon surface: Atomic simulation

Contact Info

Product

Resources

About