Structure and dielectric properties of (Na0.5Bi0.5)TiO3–SrTiO3 thick films derived from polyvinylpyrrolidone-modified chemical solution

Abstract

In this work, 1.5-lm (1 -x%)(Na 0.5 Bi 0.5 )TiO 3 -x%SrTiO 3 (abbreviated as NBT-xST, x = 0, 5, 10, 30 and 50) thick films were successfully fabricated on LaNiO 3 /Si (100) substrate by using a polyvinylpyrrolidone-modified chemical solution route. The effects of the substitution of ST on the microstructure and dielectric properties of the thick films were investigated in detail. It was found that the addition of ST could enhance the dielectric tunable properties and decrease the dielectric losses. The dielectric tunability for all the samples was higher than 30 %, and the maximum value of about 53 % was obtained in NBT-30ST film. Moreover, the substitution of ST improved the value of figure of merit of the thick film. These results indicate that NBT-ST thick films might be one of the promising environmentally friendly leadfree materials for dielectric tunable capacitor applications.

Influence of annealing temperature on the microstructure, leakage current and dielectric properties of Na0.5Bi0.5(Ti,Zn)O3 thin films

“…In consideration of the nonlinear dependence of the relative dielectric constant (e r ) upon the applied electric field (E), it is also promising for using in tunable devices such as phase shifters, tunable oscillators and tunable filters [5,6]. Moreover, it is desirable to have high e r , low dissipation factor (tan d) and low leakage current density (J) for the ferroelectric materials used in tunable devices [7,8].…”

Structural, ferroelectric and dielectric properties of Na0.5Bi0.5(Ti0.98Fe0.02)O3 thin films on different substrates

“…The NBT is known to exhibit strong ferroelectric property with large polarization (P r = 38 lC/cm 2 ) [1]. During last decade, the related performances including piezoelectric, pyroelectric, high leakage and so on, have been studied widely [2][3][4][5]. For the case of thin film form, it is suitable for integration on substrates used in the microelectronic industry.…”