Structure and electrical properties of trilayered BaTiO3/(Na0.5Bi0.5)TiO3–BaTiO3/BaTiO3 thin films deposited on Si substrate

Growth and Characterization of Na0.5Bi0.5TiO3Thin Films with BaTiO3Buffer Layer (Study of Au/Na0.5Bi0.5TiO3/BaTiO3/Pt Capacitor)

“…There are several reports in which a thin layer of this material is used as a buffer layer to enhance the desired properties of a material [10][11][12][13][14][15][16]. Also, BT/NBT-BT/BT trilayer capacitor synthesis using chemical solution deposition has been studied by Y. Guo et al [17]. In this article, BT has been used as a buffer layer due to its high dielectric constant and low dielectric loss.…”

Energy Storage Performance of Sandwich Structured Pb(Zr0.4Ti0.6)O3/BaZr0.2Ti0.8O3/Pb(Zr0.4Ti0.6)O3 Films

“…Development of high-power and large energy-density capacitors are main requisites for fast growing compact and commercially viable electronic devices [1][2][3][4]. Barium zirconate-titanate with a perovskite structure is one of the well-known lead free relaxor ferroelectric materials, which has attracted great attention for its potential applications for microwave technology, due to its high dielectric constant, low dielectric loss, and large tunability [5][6][7][8][9]. Liang et al prepared a BaZr 0.35 Ti 0.65 O 3 thin film with ultrahigh energy storage density on (100) Nb:SrTiO 3 (NSTO) substrates by using a high-pressure radio-frequency sputtering system [10].…”

Influence of annealing on the structure and ferroelectric properties of Sr0.13Na0.37Bi0.50TiO3 thin films prepared by metalorganic solution deposition

“…The structures and properties of the thin films were also studied. In order to achieve better electric properties of NBT thin films, many complex systems have been explored, such as K + -doped NBT thin films [16][17][18], K + and Li + co-doped NBT films [19,20], Ba 2+ -doped NBT films [21][22][23], and Ca 2+ -doped NBT films [24]. Fu et al [25] prepared Sr 2+ -doped NBT thin films by sol-gel method and found that the films had good dielectric tenability and the doping of Sr in NBT films could greatly reduce the dielectric loss.…”