Structure and electrical transport properties of bismuth thin films prepared by RF magnetron sputtering

Kim, Dongho; Lee, Sung-Hun; Kim, Jong‐Kuk; Lee, Gun-Hwan

doi:10.1016/j.apsusc.2005.05.046

Cited by 72 publications

(41 citation statements)

References 21 publications

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“…It is important to note that the single temperature used by Cao et al falls outside of the range within which we observe whisker growth; however, it is also the case that we are using a lower deposition rate. It is also interesting to note that our observation of the morphological changes in the film with deposition temperature are closer to those observed by Kim et al [15] in their study of RF magnetron sputtering. However, Kim did not observe whisker growth though their experiment differed in that they deposited at a higher rate of around 0.3 nms -1 .…”

Section: Temperature Dependencesupporting

confidence: 75%

An investigation of the growth of bismuth whiskers and nanowires during physical vapour deposition

Stanley¹,

Stuttle²,

Caruana³

et al. 2012

J. Phys. D: Appl. Phys.

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Bismuth thin films of thickness in the region of 500 nm have been prepared by planar magnetron sputtering onto glass, silicon and GaAs substrates. Electron microscopy of these films reveals that bismuth whiskers grow spontaneously when the substrate is heated to temperatures between 110ºC and 140ºC during deposition and the optimum temperature for such growth is largely independent of substrate. Depositing films under similar conditions using thermal evaporation does not, however, produce the whisker growth. X-ray diffraction has been employed to investigate film texture with temperature and it has been shown that the and has a higher change-over temperature. The whiskers that grow from the film emerge at off-normal angles between 43.3º and 69.2º with a mean of 54±3º. The projected length of whiskers on a 500 nm film on a GaAs substrate shows a wide distribution to a maximum of more than 100 µm. The mean projected length for this sample was 16±1 µm and the diameter is around 0.5 µm. Measurements of the electrical properties of the whiskers at room temperature reveals ohmic behaviour with an estimated resistivity of 2.2±0.2 µΩm. Detailed examination of scanning electron micrographs, eliminates all growth mechanisms except tip growth by a non-catalysed vapour-solid/vapour-liquid-solid method. By depositing thinner films it is shown that this spontaneous growth of whiskers offers a route to fabricate high quality bismuth nanowires of lengths exceeding 10 µm.2

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Section: Temperature Dependencesupporting

confidence: 75%

An investigation of the growth of bismuth whiskers and nanowires during physical vapour deposition

Stanley¹,

Stuttle²,

Caruana³

et al. 2012

J. Phys. D: Appl. Phys.

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“…For experiments at relatively low temperature, like room temperature as in our case, kinetic limitations may prevent the most stable structures from being produced (for example, see temperature effects on growth of Bi thin films on glass [11]). Nucleation and film growth cannot always be LBNL-59621 revised Accepted @ Solid Sate Communications, 2006 6 described by one of the three "classical" growth modes but other, kinetically limited modes may apply.…”

Section: Discussionmentioning

confidence: 99%

Smoothing of ultrathin silver films by transition metal seeding

Anders

Byon

Kim

et al. 2006

Solid State Communications

Self Cite

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Abstract.The nucleation and coalescence of silver islands on coated glass was investigated by insitu measurements of the sheet resistance. Sub-monolayer amounts of niobium and other transition metals were deposited prior to the deposition of silver. It was found that in some cases, the transition metals lead to coalescence of silver at nominally thinner films with smoother topology. The smoothing or roughening effects by the presence of the transition metal can be explained by kinetically limited transition metal islands growth and oxidation, followed by defect-dominated nucleation of silver.LBNL-59621 revised Accepted

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“…This choice of substrate is also very beneficial for practical applications, as the interface between film and insulating substrate, expected to reveal topological states, will also be protected from influencing oxidation effects arising from ambient exposure in technological applications [19]. The growth of Bi has been extensively studied on Si(111) [20][21][22][23][24][25][26][27][28][29] and HOPG [13,[30][31][32] as well as other surfaces [3,4,12,[33][34][35][36][37][38], resulting in fabrication of films with a range of different morphologies, orientations, and strain. The fabrication of Bi films has attracted considerable interest in recent years, as their controlled growth, with focus on morphology and crystallographic orientation, on semiconductor and oxide surfaces is not a trivial task.…”

Section: Introductionmentioning

confidence: 99%