Structure and Electro-Optical Property of the Dy³⁺Doped Lanthanum Zirconate-Titanate Ceramics

Fabrication of Relaxer-Based Piezoelectric Energy Harvesters Using a Sacrificial Poly-Si Seeding Layer

“…These values are comparable with those previously reported for PZT-PZN films. [33][34][35][36][37] The dielectric constant and polarization values for the stack with poly-Si are indicative of 24% improvement compared with the values obtained for the stack without poly-Si. The improvement in the dielectric constant is attributed to reduction of the number of nucleation sites as a result of the poly-Si.…”

The effect of poling conditions on the performance of piezoelectric energy harvesters fabricated by wet chemistry

“…From the material standpoint, it is well known that the addition of donor dopants or higher valence dopants such as La 3+ , [2][3][4] and Nb 5+ , [5][6][7] to the original piezoelectric material (ABO 3 perovskite structure) contributes electrons when they substitute on the A and B sites, 5,8 improving the energy density of thin-lm piezoelectric materials. 9 We have recently reported the synthesis and integration of a piezoelectric energy harvester based on an alternative material, namely, the relaxor composition 0.9Pb(Zr 0.53 ,Ti 0.47 )O 3 -0.1Pb(Zn 1/3 ,Nb 2/3 )O 3 or PZT-PZN. 10,11 The thin-lm relaxor material was integrated into a cantilever device by a manufacturable, topside, low cost, and planar chemicalwet-etch based process.…”