2020
DOI: 10.1016/j.apsusc.2020.145986
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Structure and electron affinity of (1 12¯0)–X 4H–SiC surface

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Cited by 2 publications
(2 citation statements)
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“…The smallest EA is obtained for H-termination on the (0001) face at around 1 eV. These values and their associated ranges would be anticipated and indeed are similar to previous 4H-SiC non-polar terminated surfaces [7] with matching surface coverage and species.…”
Section: Discussionsupporting
confidence: 87%
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“…The smallest EA is obtained for H-termination on the (0001) face at around 1 eV. These values and their associated ranges would be anticipated and indeed are similar to previous 4H-SiC non-polar terminated surfaces [7] with matching surface coverage and species.…”
Section: Discussionsupporting
confidence: 87%
“…The EA is the energy difference between an electron in vacuum and in the conduction band of a non-metal, so it is affected by the surface, including its chemical termination, with a layer of surface dipoles producing a step up or down in electron-energy, potentially by several volts. We have recently reported the EAs of nonpolar surfaces of 4H-SiC [7], but there is a paucity of data relating to EAs of polar SiC surfaces. This is partly because [15]) results in the charge density peaking closer to the carbon atom.…”
Section: Introductionmentioning
confidence: 99%