1999
DOI: 10.1143/jpsj.68.3533
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Structure and Electronic Properties of Amorphous Ge–Pd Alloys Manifesting the Metal-Insulator Transition. I. Atomic Structure and Electrical Conductivity

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Cited by 3 publications
(3 citation statements)
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“…Since the MIT takes place at 11.5 < x c < 12.8 as shown in the previous section, electrons occupying the states in the vicinity of E F are still localized and the metallic conduction is prohibited in alloys with x m < x < x c . This picture is similar to those in amorphous Si-Ni 17) and Ge-Pd 19,20) alloys. It is worth noting here that the present energy resolution of UPS is not enough to detect a Coulomb gap Δ formed at E F as predicted by Efros and Shklovskii 21) for x < x c .…”
Section: Photoemission Spectroscopysupporting
confidence: 85%
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“…Since the MIT takes place at 11.5 < x c < 12.8 as shown in the previous section, electrons occupying the states in the vicinity of E F are still localized and the metallic conduction is prohibited in alloys with x m < x < x c . This picture is similar to those in amorphous Si-Ni 17) and Ge-Pd 19,20) alloys. It is worth noting here that the present energy resolution of UPS is not enough to detect a Coulomb gap Δ formed at E F as predicted by Efros and Shklovskii 21) for x < x c .…”
Section: Photoemission Spectroscopysupporting
confidence: 85%
“…[16][17][18][19] Briefly, a composite target of high-purity Si and 99.9% Ti chips of appropriate area ratio was simultaneously sputtered and deposited on a Si(111) or a quartz glass substrate to a film thickness of about 1 μm at ambient temperature. The former was used samples for photoemission study and the latter for electrical conductivity measurements.…”
Section: §1 Introductionmentioning
confidence: 99%
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