Structure and elemental composition of transparent nanocomposite silicon oxycarbonitride films

An innovative GC-MS, NMR and ESR combined, gas-phase investigation during chemical vapor deposition of silicon oxynitrides films from tris(dimethylsilyl)amine

“…In this context, Fainer et al investigated gas mixtures of 1,1,3,3-tetramethyldisilazane (HSi(CH3)2)2NH (TMDS) with O2 and N2 during plasma chemical decomposition for SiCxNyOz:H nanocomposite films. 30 Their gas phase characterization by in situ optical emission spectroscopy revealed potential formation of volatile products such as methane CH4 and CO. However, siliconcontaining compounds were absent from their study.…”

Plasma CVD of B–C–N thin films using triethylboron in argon–nitrogen plasma

“…53,54 This is similar to the literature on plasma CVD of diamond, 55 carbon nanotubes, 56 carbon nitride 57 and silicon (oxy)carbonitride. 58,59 Thus, the formation of volatile CN compounds could be a carbon sink explaining the high B/C ratios observed in our films compared to films deposited in Ar-TEB plasma. 16 The presence of O in the films is believed to be due to exposure to air post deposition.…”

Structural and optical properties o plasma-deposited a-C:H:Si:O:N films

“…Films deposited from HMDSO-O 2 -Ar mixtures may find application as multilayered organosilicon/silica films for the protection of metal surfaces [20] . Although there is a report of plasma-deposited nanocomposite hydrogenated silicon oxycarbonitride films obtained from tetramethlydisilazane-O 2 -N 2 mixtures [23] , characterizations beyond chemical composition and structure are required to suggest possible applications of this material. The mechanical properties of our films, such as hardness, Young's modulus and stiffness, are also relevant to possible applications, but require separate study.…”

“…Thin films of a-C:H:Si:N [1][2][3][4][5][6][7][8] , a-C:H:Si:O [9][10][11][12][13][14][15][16][17][18][19][20] , and a-C:H:Si:O:N [21][22][23][24] , where a designates amorphous, have been produced by plasma deposition from diverse monomers and comonomers. For example, a-C:H:Si:N has been produced, among others, in plasmas fed hexamethyldisilazane and nitrogen [1] , diethylsilane and ammonia [3] , and methane, silane and nitrogen [5] .…”

“…Similarly, a-C:H:Si:O has been produced from plasmas of hexamethyldisiloxane (HMDSO) [9] , trimethylmethoxysilane and argon [10] , and HMDSO and argon [12] . Films of a-C:H:Si:O:N have been deposited from plasmas fed HMDSO, acetylene and nitrogen [22] , and from tetramethlydisilazane, oxygen and nitrogen [23] . Applications of a-C:H:Si:N include electrical insulation, protective layers [1] , and electronic passivation of n-type c-silicon [25] .…”