Phosphonates
have been verified experimentally to have substantial
influence on the performance of solution-processed nickel oxide (sNiO)-based
organic electronic devices. However, a fully atomistic understanding
of the phosphonate/sNiO interface is still lacking. Therefore, based
on first-principles calculations, the interface of 4-cyanophenylphosphonic
acid (CYNOPPA) molecules and the sNiO surface was studied comprehensively
to clarify the grafting process. sNiO was modeled by a variety of
reconstructed NiO(111) surfaces with different amounts of hydroxylation,
as well as by NiO(100) and β-Ni(OH)2(001) surfaces.
We discuss the adsorption geometries and energies of CYNOPPA on these
surfaces, as well as the evolution of the microstructures due to thermal
energy, and show the impact on the work function and thermodynamic
driving forces for hole transport. The results indicate that CYNOPPA
molecules adsorb on the sNiO surface in a variety of binding modes.
Independent of the binding mode, the adsorption process always leads
to a positive charging of the sNiO surface, with the counter charges
in the adsorbed CYNOPPA molecules, either by direct proton transfer
or by H2O elimination from the interface during the adsorption
process. Consequently, the work function of the sNiO surface increases
upon CYNOPPA adsorption, partially enhanced by the inherent dipole
moment of CYNOPPA. The highest occupied molecular orbital of CYNOPPA
is always below the valence band maximum and thus facilitates hole
injection.