Structure and interfacial stability of (111)-oriented InAsSb/InAs strained-layer multiquantum well structures

Abstract

Articles you may be interested inInterfacial properties of strained piezoelectric InGaAs ∕ GaAs quantum wells grown by metalorganic vapor phase epitaxy on ( 111 ) A GaAs

Effects of Gas switching sequences on GaAs/GaAs1−ySby superlattices

“…Combined with these difficulties over control of the alloy composition, the growth of As-Sb heterojunctions, such as InAs/GaSb, has shown a complex kinetic behavior in forming a specific heterointerface structure. Studies focused on InAs/GaSb superlattices (SL), as well as SL containing As 1Ày Sb y ternaries, indicate that a number of factors can lead to significant grading of the antimony composition across the interface [6][7][8][9][10]. Results from molecular beam epitaxy (MBE) studies of InAs/GaSb and GaAs 1Ày Sb y / GaAs indicate that antimony can segregate during growth forming a surface accumulation or segregation layer.…”

Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes

“…One approach is to use type II InAsSb/InAs multiquantum well (MQW) structures which offer the possibility of minimizing auger recombination [6] and provide high electroluminescence (EL) intensity at room temperature. During the growth of InAsSb layers in InAsSb/InAs, one monolayer (ML) of Sb segregates to the surface before a steady-state condition is reached and the excess Sb is incorporated into the InAs cap [7]. This effect alters the band structure considerably and is especially important for type II structures where well-defined abrupt interfaces are needed for efficient electron-hole (e-h) recombination.…”