Structure and magnetism of Coa(1−x)MnaxGeb epitaxial films

Tsui, F.; He, Liang; Lorang, D.; Fuller, Amelia A.; Chu, Yong S.; Tkachuk, Andrei; Vogt, Stefan

doi:10.1016/j.apsusc.2005.03.238

Cited by 8 publications

(12 citation statements)

References 17 publications

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“…A multilayer method, sequential deposition of monolayer wedges of each element, was employed for the combinatorial synthesis. 11 The anomalous x-ray diffraction technique involves diffraction as a function of incident photon energy through a characteristic absorption edge of an element. 8 The film was grown at 250°C at a deposition rate of 0.1 Å / s on top of a 200 Å Ge͑111͒ buffer layer.…”

Section: Experiments and Crystal Structurementioning

confidence: 99%

Anomalous x-ray diffraction study of disorders in epitaxial films of the Heusler alloy Co2MnGe

Collins¹,

Zhong²,

Chu³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx filmsThe authors report a study of structural and chemical disorders in a ternary combinatorial epitaxial film of Co x Mn y Ge 1−x−y in the composition range that includes the Heusler alloy Co 2 MnGe, using microbeam anomalous x-ray diffraction techniques. The structural and chemical ordering of the alloy has been found to be extremely stable over a large composition range, while elemental site swapping and sublattice vacancies have been identified. A model of anomalous diffraction around the Co and Ge edges is presented and shown to make possible the identification and quantification of these disorders in an epitaxial film.

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Section: Experiments and Crystal Structurementioning

confidence: 99%

Anomalous x-ray diffraction study of disorders in epitaxial films of the Heusler alloy Co2MnGe

Collins¹,

Zhong²,

Chu³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…4(b) and (d)). The latter transition correlates with a first-order structural phase transition from cubic to hexagonal [7]. In the isotropic region the hysteresis loops exhibit a large switching width ( Fig.…”

Section: Article In Pressmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

“…The growth and annealing conditions were optimized for the best structural quality of the Heusler composition [6]. The ternary composition was examined and quantified using an array of complementary techniques, including X-ray fluorescence spectroscopy [7], secondary ion mass-spectrometry, electron energy dispersive X-ray spectroscopy, and Rutherford backscattering spectroscopy. In Fig.…”

Section: Introductionmentioning

confidence: 99%

“…1(a), a schematic diagram of the combinatorial sample is shown, indicating the ternary region (the triangle) and the location of Co 2 MnGe. Structural investigations using regular and anomalous X-ray diffraction techniques [7,8] indicate that epitaxial films within this region of composition exhibit a high degree of structural and chemical ordering.The magnetooptic Kerr effect (MOKE) measurements were performed at room temperature in the longitudinal geometry using a diode laser (wavelength of 664.3 nm). A standard lock-in technique with a photoelastic modulator was used for simultaneous detection of both Kerr rotation and ellipticity.…”

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Composition dependence of magnetic anisotropy and quadratic magnetooptical effect in epitaxial films of the Heusler alloy Co2MnGe

Muduli¹,

Rice²,

He³

et al. 2008

Journal of Magnetism and Magnetic Materials

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Epitaxial Heusler Alloys onIII‐VSemiconductors

Hesjedal

2007

Handbook of Magnetism and Advanced Magnetic Materials

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At the basis of future applications of spin electronics are ferromagnetic films that have a Curie temperature above room temperature, a crystal structure that allows for epitaxial growth on common semiconductor surfaces, and a high degree of spin polarization at the Fermi level. A class of ternary compounds, the so‐called Heusler alloys, combine these requirements as they are lattice‐matched to many compound semiconductors, have a compatible crystal structure (face‐centered cubic), and show high Curie temperatures. Moreover, calculations suggested that some Heusler alloys may belong to the magnetic class of half‐metals that is characterized by a 100% spin polarization at the Fermi level. We review the work on epitaxial‐Heusler alloy films on semiconductor surfaces. Special emphasis is laid on molecular‐beam epitaxy (MBE), as this growth method allows for an in situ control of the growth and structure of the material. Taking Co 2 FeSi on GaAs as an example, the structural and magnetic properties of MBE‐grown samples will be discussed.

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Structure and magnetism of Coa(1−x)MnaxGeb epitaxial films

Cited by 8 publications

References 17 publications

Anomalous x-ray diffraction study of disorders in epitaxial films of the Heusler alloy Co2MnGe

Anomalous x-ray diffraction study of disorders in epitaxial films of the Heusler alloy Co2MnGe

Composition dependence of magnetic anisotropy and quadratic magnetooptical effect in epitaxial films of the Heusler alloy Co2MnGe

Epitaxial Heusler Alloys onIII‐VSemiconductors

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