Structure and mechanical properties of thin films deposited from 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane and water

Abstract

Pulsed-plasma chemical vapor deposition of 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane (V3D3) and water produced thin films with significant Si–OH content. Subsequent annealing of the films resulted in condensation of proximal Si–OH groups, further generating a Si–O–Si network and strengthening the film. Fourier-transform infrared spectroscopy analysis showed increasing OH content with increasing plasma duty cycle, and nanoindentation results confirmed increasing hardness with duty cycle, with the 10–40 duty cycle annealed sample having a hardness value of 0.527 GPa. These results were explained within the context of the continuous random network theory and percolation of rigidity arguments. Thermal stability was excellent, with a best-case thickness retention of 99.25% after a 2 h anneal at 400 °C under N2. Dielectric constants for the annealed films ranged between 2.55 and 2.9. The moderate power involved (200 W peak) is amenable to inclusion of a porogen species, opening the possibility of using this methodology to generate a porous thin film with adequate mechanical properties via chemical vapor deposition.

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films

“…3a, spectrum 4 (Fig. 3b, spectrum 4) to Si-CH 3 band strongly shifted to the high frequency side due to increase of bonding polarity caused by oxygen incorporation [37]. The weak but well detectable ) is attributed to C=C and C=O bonds, respectively [33].…”

The impact of the nano-pore filling on the performance of organosilicon-based moisture barriers

“…This stretching band is characterized by a higher wavenumber (1080 cm −1 ) shoulder associated with short, linear siloxane chains [41,46,47], and by the presence of the O y Si\ \H x stretching at 2100 cm − 1 [42,47]. The broadening and decrease in intensity of the Si-(CH 3 ) x related signal at 1260 cm − 1 reveals a shift towards a O x Si-(CH 3 ) y chemistry [47][48][49], due to the fragmentation occurring in the plasma phase.…”

Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template

“…However, after 500°C annealing, the resulting leakage current returns to a lower level; for instance, it is equal The reduced modulus (E r ) and hardness (H) of the low-k films were calculated according to Eqs. (2)(3)(4).…”

“…As one of the most promising ILD candidates, SiOCH dielectric films have been investigated extensively, and exhibit typical hardness of 0.13 GPa to 1.7 GPa and elastic moduli of 2.5 GPa to 12.2 GPa. [2][3][4][5][6][7] It is well known that decreasing the polarizability and density of a bulk material can significantly reduce its dielectric constant; e.g., low-polarizability C-H, C-C, C-N, C-F bonds or pores/spaces are introduced into ultralow-k films. Among the various ultralow-k materials, porous SiCOH dielectric with many weak polar Si-C, C-C, and C-H bonds is considered one of the strong candidates for the 45 nm/32 nm technology nodes, including porous methyl silsesquioxane (MSQ), porous hydrogen silsesquioxane (HSQ), and porous carbon-doped oxide (CDO) films.…”