Structure and optical analysis of Ta2O5 deposited on infrasil substrate

Electrical Characterization of Al/Ta2O5/Al Structures Grown by Electron Beam Deposition

“…Philips X-ray diractometer (model X'-Pert) was used for the measurements. The absence of sharp peaks in the X-ray patterns indicates that the Ta 2 O 5 lms are amorphous in agreement with previous observations by Azim et al [18].…”

Optical spectroscopy, optical conductivity, dielectric properties and new methods for determining the gap states of CuSe thin films

“…The first method describes the contribution of the free carriers and the lattice vibration modes of the dispersion. The following equation can be used to obtain the high frequency dielectric constant [15][16][17][18]:…”

“…The properties of the investigated sample could be treated as a single oscillator of wavelength o at the higher frequency. The high frequency dielectric constant can be calculated by applying the following simple classical dispersion relation [15][16][17][18]:…”

Electrical and optical properties of tantalum oxide thin films prepared by reactive magnetron sputtering

“…In microelectronic applications, Ta 2 O 5 thin film is used in highdensity dynamic-random-access memories (DRAMs) as well as in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its high dielectric constant, high chemical, thermal stability, low leakage-current density and being compatible with the microelectronic processing technology [6,7]. Deposition techniques such as thermal evaporation [8], rf and dc reactive magnetron sputtering [9,10], electron beam evaporation [11], pulsed laser deposition [12], atomic layer deposition [13], and metal-organic chemical vapor deposition [14] are employed for deposition of Ta 2 O 5 thin films. Among these techniques, reactive magnetron sputtering has the advantage in the preparation of uniform films on large area substrates by sputtering of metallic tantalum target in the presence of reactive gas of oxygen.…”