Structure and optical properties of nanocrystalline hafnium oxide thin films

Impact of post deposition annealing in O2 ambient on structural properties of nanocrystalline hafnium oxide thin film

“…The primary factors responsible for this are its outstanding electrical properties like wide band gap, high refractive index, high dielectric constant and better chemical stability i.e. excellent process compatibility with concurrent IC technology [1][2].…”

First-principles simulation of oxygen vacancy migration in $$\hbox {HfO}_{ x}$$, $$\hbox {CeO}_{ x}$$, and at their interfaces for applications in resistive random-access memories

“…The density of thin films have strong dependence on both the deposition temperature and pressure. HfO 2 thin films grown by sputterdeposition in a wide range of growth temperatures revealed the density of amorphous HfO 2 films at room temperature is only 7.4/, g/cm 3 and the density increases to 9.1 g/cm 3 for crystalline HfO 2 films deposited at 300 • C to 700 • C, which suggests that our unusually low density is observed in real systems [22]. Thereafter, the atomic positions were relaxed and the structure fixed at this density throughout our simulations.…”

The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering

“…It is also seen that the refractive indices of the films increase as a result of increasing deposition temperature while the extinction coefficients decrease. The increase in refractive indices can be attributed to the increase of the degree of homogeneity and the packing density of films in which the velocity of light in films would decrease, this can be explained by the Lorentz-Lorenz relation (equivalent to Clausius-Mossotti relation) as mentioned in reports[32][33][34][35]. The decrease in extinction coefficients can be correlated to of defects and absorption centers in films.…”