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Articles you may be interested inEffect of substrate bias and oxygen partial pressure on properties of RF magnetron sputtered HfO2 thin films J. Vac. Sci. Technol. B 32, 03D104 (2014); 10.1116/1.4825234Dynamic in situ spectroscopic ellipsometric study in inhomogeneous TiO 2 thin-film growth Hafnium oxide (HfO 2 ) films were grown by sputter-deposition by varying the growth temperature (T s ¼ 25-700 C). HfO 2 films grown at T s < 200 C were amorphous, while those grown at T s ! 200 C were monoclinic, nanocrystalline with ( 111) texturing. X-ray reflectivity (XRR) analyses indicate that the film-density (q) increases with increasing T s . The index of refraction (n) profiles derived from spectroscopic ellipsometry analyses follow the Cauchy dispersion relation. Lorentz-Lorenz analysis (n (k) ¼ 550 nm) and optical-model adopted agree well with the XRR data/analyses. A direct T s -q-n relationship suggests that tailoring the optical quality is possible by tuning T s and the microstructure of HfO 2 films. V C 2014 AIP Publishing LLC.

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