Structure and optical properties of light-emitting Si films fabricated by neutral cluster deposition and subsequent high-temperature annealing

Honda, Yukako; Shida, Satoshi; Goda, Kazuo; Nagata, Tetsuo

doi:10.1016/j.jnoncrysol.2006.03.002

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2008

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“…These three peaks pertained to the crystalline Si nanoclusters embedded in Si:ZnO films. [14][15][16] The observation of these three Sirelated XRD peaks agree well with the HRTEM results shown in Figs. 1(a) and 1(b).…”

Section: Resultssupporting

confidence: 88%

Investigation of silicon nanoclusters embedded in ZnO matrices deposited by cosputtering system

et al. 2008

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A co-sputtering system was used to deposit silicon nanoclusters embedded in zinc oxide matrix (Si:ZnO) at low temperature without post-annealing. By adjusting the radio frequency power of the Si target during co-sputtering, Si:ZnO films with various crystallographic structures can be obtained. Silicon nanoclusters embedded in the zinc oxide matrix were examined using a high-resolution transmission electron microscope, x-ray diffractometer, and Fourier transformation infrared spectrometry. By comparing with photoluminescence spectra, we can clearly identify quantum confinement effect of silicon nanoclusters embedded in the ZnO matrix.

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Section: Resultssupporting

confidence: 88%