Structure and optical properties of PbS‐SnS mixed crystal thin films

Abstract

Thin films of lead tin sulphide PbSnS2 were deposited on glass substrates at 100 °C at vacuum pressure of 3×10–6 mbar using a thermal evaporation method. Scanning electron microscopy (SEM) and X‐ray characterization revealed that thin films were monophase and polycrystalline. The average particle size was approximately 28 nm. Absorption coefficient of PbSnS2 thin films (∼105 cm–1) was found from transmission optical spectroscopy measurements. Its fundamental absorption edge is shown to be 1.65 eV with direct allowed transition recommended for photovoltaic application. Thermoelectric measurements showed the materials to be p‐type in nature. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Electrical properties of PbxSn1‐xS thin films prepared by hot wall deposition method

“…) in the visible range [2], contain only relatively less-toxic materials, stable in slight acidic media [7] and may be used for infrared detection and solar cells application. SnS and PbS has also a good thermoelectric properties and it may became a good thermoelectric material for future applications, because of their potential use in cooling systems [8].…”

“…2+ substitution are only rarely described in literature [1,2]. Layered semiconductor SnS is IV-VI compound and crystallizes in an orthorhombic structure [3] belonging to the space-group symmetry 16 2 ( ) h D Pnma with lattice parameters of a=3.9833, b=4.3302 and c=11.1892 Å at room temperature [1].…”

Microstructure of Sn1–xPbxS grown by hot‐wall technique

“…16, 18 differ from that used here for simulation of electron diffraction zone axis pattern and HRTEM micrographs (we use the data given by 8, see above). Thin polycrystalline films of Sn 1– x Pb x S on glass have already been prepared by thermal evaporation 20. The growth of Sn 1– x Pb x S micro‐whiskers via a VLS mechanism was recently reported by Ref.…”

“…The intention of this work is to give detailed information on the unusual defect structure of thin Sn 1– x Pb x S films and micro‐whiskers grown by hot‐wall technique on glass substrates. This material is one of the promising materials for low‐cost thin film solar cell application because of its direct band gap of 1.1–1.65 eV 20 and its optical absorption coefficient of about 10 5 cm −1 . Sn 1– x Pb x S was found to be p‐type conducting and its electrical and optical properties can be adjusted via lead content.…”

Raman spectroscopy of layered lead tin disulfide (PbSnS2) thin films

“…Interestingly, this material could be used for promising potential application. Firstly, due to its 1.4 eV band gap, it was recognized as a potential candidate as a material for thin film solar cells . Lately, it was demonstrated that PbSnS 2 can be utilized as a part of thermoelectric composite material, collectively with PbTe .…”