Structure and optical properties of ZnO:V thin films with different doping concentrations

Wang, Liwei; Li, Meng; Teixeira, V.; Song, Shingeng; Xu, Zheng; Xu, Xurong

doi:10.1016/j.tsf.2008.12.043

Cited by 94 publications

(30 citation statements)

References 20 publications

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“…It has been observed that the XRD peak broadening decreases with increase of growth temperature. The peaks with the Miller indices given belong to the ZnO presence of five peaks with orientations; (100), (002), (102), (220) and (110) confirmed these X-ray diffraction patterns are polycrystalline for ZnO thin films deposited on silicon [7]. The intensity of these diffraction increases with increasing the growth temperature.…”

Section: Resultssupporting

confidence: 54%

“…, where λ, θ and B are the X-ray wavelength (1.54 Å), Bragg diffraction angle and line of full width at half maximum, respectively [7]. It was determined that there is a continuous increase in particle size with increasing growth temperature.…”

Section: Cos D Bmentioning

confidence: 99%

“…It is indicated the growth temperature above room temperature exhibiting good crystallinity. The films has the highest peak value of XRD and the narrowest value of FWHM, it has the best crystal quality [6,7]. The particle size of thin films ZnO for (002) was determined according to Scherrer in a around 10.2 nm at room temperature and increased to 60.2 nm for the growth temperature 500 o C. The increasing particle size is due to the emerging of the smaller particles into larger ones resulting from the potential energy difference between small and large particles, which was occur through solid state diffusion [8].…”

Section: Cos D Bmentioning

confidence: 99%

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Effect of growth temperature on structural and electronic properties of ZnO thin films

Tahir

Jae

2017

AIP Conference Proceedings

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Abstract.The electronic and structural properties for RF magnetron sputtering deposited ZnO thin films grown on Si substrate was obtained by using X-ray diffraction (XRD) and reflection electron energy loss spectroscopy (REELS). XRD spectra show the intensity of the diffraction peak increases with increasing the growth temperature with (002) is strongest diffraction peak. The particle sizes for (002) are increase from 10.2 nm to 60.2 nm with increasing growth temperature from room temperature to 500 o C, respectively. The band gap of ZnO thin films REELS spectra are 3.1 0.1 eV. The dominant peak from REELS at about 18 eV is ascribed to a bulk Plasmon excitation, which represents the collective oscillation of the valence electrons excited by the incident fast electrons.

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Section: Resultssupporting

confidence: 54%

Section: Cos D Bmentioning

confidence: 99%

Section: Cos D Bmentioning

confidence: 99%

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Effect of growth temperature on structural and electronic properties of ZnO thin films

Tahir

Jae

2017

AIP Conference Proceedings

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“…For lower concentration (1-5 %), the homogeneity can be seen but for higher concentration inhomogeneous distribution is evident. As doping concentration is large, it causes inhomogeneity and destroys the crystal structure (Wang et al 2009) as can be observed for 9 % doped sample. There is a large difference in particle size of pure and the 1 % V doped sample which indicates that even a small amount of V doping causes a significant change in the morphology.…”

Section: Scanning Electron Microscopy Semmentioning

confidence: 81%

Structural, optical and ferroelectric properties of V doped ZnO

et al. 2013

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Present work reports the structural, optical and ferroelectric properties of vanadium doped ZnO samples synthesized via solid state reaction method. X-ray diffraction (XRD) study confirms the presence of hexagonal wurtzite phase and the slight changes in lattice parameters is observed after V doping in host ZnO and impurity oxide of ZnV 2 O 6 . Presence of E 1 and E 2 modes in Raman spectroscopy of V doped ZnO indicates the stability of the wurtzite structure of ZnO, which is consistent with the XRD results. UV-Vis spectroscopy results show decrease in band gap of ZnO from 3.35 to 3.24 eV for 1 % V doped sample, whereas it increases with the V doping and increase in the impurity of ZnV 2 O 6 . Furthermore, it is observed that the ferroelectric polarisation of ZnO improves by V doping. Above results show that one need to consider the presence of ZnO in composite form of oxides of Zn and V and not as a pure V doped ZnO system.

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“…Finally, the dislocation density (δ) which is given by the following relation: between cycles of preparation this film [32]. In the same line, in the UV region, it can be seen shoulders, lying in transmission spectra which may be assigned to the presence of porosity and defaults inside the films.…”

Section: Structural Propertiesmentioning

confidence: 88%

Li-doped ZnO Sol-Gel Thin Films: Correlation between Structural Morphological and Optical Properties

Hb¹,

Wr²,

Zaghouani³

et al. 2018

J Textile Sci Eng

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Transparent Conducting Oxides (TCOs) have important device applications used in solar cells as transparent electrodes. In particular, ZnO material has been investigated for many years due to its excellent physical properties and potential applications in transparent conductive contacts when it is doped by several types of doping. If n-type doping is easily achievable in ZnO, the realization of stable and reproducible p-type ZnO is still difficult. The group I (Li, Na) atoms could be potential candidates to result in p-type ZnO. The choice of lithium as a dopant is motivated firstly by its abundance in nature, its low cost compared to other alkali metals and its wide application. Undoped and Lithium-doped zinc oxide thin films (ZnO:Li) at different percentages (5, 15 and 25%) were prepared on glass substrates, using the sol-gel spin-coating method, and the influence of the Li concentration on the structural, morphological and optical properties of the ZnO thin films was investigated. X-ray diffraction (XRD) analysis shows that the un-doped and 5 at % Li-doped films have a hexagonal wurtzite structure and are preferentially oriented along the c-axis from the substrate. SEM analysis shows a compact surface with mainly hexagonal grains. Optical transmittance measurements show that all samples have average 88% transparency in the visible light, with a sharp fall of the absorption at a wavelength (~376 nm) close to the ZnO band gap. The results suggest that the optical properties of the ZnO:Li films can be further improved for solar cell applications.

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Structure and optical properties of ZnO:V thin films with different doping concentrations

Cited by 94 publications

References 20 publications

Effect of growth temperature on structural and electronic properties of ZnO thin films

Effect of growth temperature on structural and electronic properties of ZnO thin films

Structural, optical and ferroelectric properties of V doped ZnO

Li-doped ZnO Sol-Gel Thin Films: Correlation between Structural Morphological and Optical Properties

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