Structure and physical properties evolution of ITO film during amorphous-crystalline transition using a highly effective annealing technique

Li, Jiaming; Jiang, Liangbao; Mu, Chunlai; Li, Xiaoyü; Wei, Youxiu; Ma, Yibo; Fu, Ziyi

doi:10.1016/j.ceramint.2019.05.143

Cited by 21 publications

(15 citation statements)

References 52 publications

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“…This is in good agreement with XRD results in terms of the strong intensity of the (400) peak [22,27]. As previously mentioned, the annealing process improves the transparency of the layers, as reported previously [33]. However, the transmission spectrum of a 30-min sample after annealing has a lower variation in the transparency zone than before annealing.…”

Section: Optical Propertiessupporting

confidence: 91%

Investigation of structural and electrical properties of ITO thin films and correlation to optical parameters extracted using novel method based on PSO algorithm

et al. 2023

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Thermally annealed DC sputtered indium tin oxide (ITO) thin films were investigated for improvement in properties. The structural and optoelectronic characteristics of as-grown and air annealed films were studied and correlated to the film deposition time. Raman spectroscopy analysis showed low crystalline quality films for as-grown films and were significantly improved after annealing. X-ray diffraction analysis confirmed the crystallinity of samples with (222) preferential orientation. The 30-min ITO films showed a peak at (400). The films optical study shows an increased transmittance (in the transparency region) with decreasing deposition time, yielding a high transparency of 90% for the 5-and 15-min ITO films annealed at 400°C. The films thickness and optical constants were determined from optical transmission only without interference fringe using a novel method based on particle swarm optimization (PSO) algorithm. The absorption coefficient and calculated refractive index decreased with increasing deposition time and their value reduced further after annealing treatment. The 30-min ITO films showed a comparable low resistivity of 4 9 10 -3 X cm before and after annealing as determined by Hall effect measurements. This observation confirms their non-sensitivity to the oxygen post-contamination that resulted from (400) orientation. A shift of the absorption edge towards shorter wavelengths accompanied with an increase in the optical bandgap before and after annealing with decreasing thickness were observed. We have demonstrated that the optical parameters such as the optical gap depend mainly on the electrical parameters such as the carrier concentration.

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Section: Optical Propertiessupporting

confidence: 91%

Investigation of structural and electrical properties of ITO thin films and correlation to optical parameters extracted using novel method based on PSO algorithm

et al. 2023

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“…Moreover, TOPCon is easily adapted for IBC 1 and bifacial use 2 . Alternatively, tandem PV devices are receiving increased attention, where a crystalline silicon (c‐Si) bottom cell is to be combined with a perovskite, 3‐5 C(I)GS 6 or nano‐c‐Si top cell 7,8 . These approaches all have a major challenge in common.…”

Section: Introductionmentioning

confidence: 99%

Advanced textured monocrystalline silicon substrates with high optical scattering yields and low electrical recombination losses for supporting crack‐free nano‐ to poly‐crystalline film growth

Vrijer

Smets

2021

Energy Science & Engineering

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Crystalline silicon tandem devices with perovskites, CIGS, and nanocrystalline silicon, as well as the TOPCon design, are incompatible with the conventional pyramidal surface texture of silicon. This is a result of crack formation in nano to polycrystalline growth on large sharp surface features. In this work, three texturing approaches are investigated, using alkaline and/or acidic wet chemical etches, that can lead to the crack‐free growth of nano to polycrystalline materials on textured surfaces. In this work, we show that without acidic smoothening, the fraction of <111> pyramidal surface coverage has to remain relatively small to prevent crack formation during crystalline growth on these surfaces. Applying an acidic etch as a function of time continuously smoothens surface features. This shifts the reflection to wider scattering angles and results in higher total reflected intensity with respect to the conventional texture, making it an interesting option for a wide variety of tandem pv applications. Finally, we demonstrate crater‐like features on a <100> monocrystalline silicon surface using an etching process including a sacrificial layer. These craters increase light scattering into wider angles, but to a lesser extent than the former approach. In terms of passivation, we demonstrate the positive effect of a post deposition hydrogen treatment. Initial dilution of the silane plasma improves passivation on a <111> surface, but is detrimental to passivation on a <100> surface, likely because the hydrogen dilution results in epitaxial growth at the c‐Si/a‐Si:H hetero‐interface. A minority carrier lifetime of over 3 ms has been achieved for all texturing approaches, after deposition of a 15 nm a‐Si:H layer on both sides of the wafer, for different a‐Si:H deposition and annealing schemes.

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“…The heating power density requirement of the electrically heated glass is generally 6 kW/m 2 -7 kW/m 2 , which is generally 7 Ω/□-10 Ω/□ when converted to the surface resistance of the ITO film. There are generally two traditional ways to obtain low-resistance ITO thin films [4]. The first is to use high-temperature preparation methods to directly prepare crystalline ITO thin films [5].…”

Section: Introductionmentioning

confidence: 99%

Preparation of large-scale uniformly crystallized ITO thin films by rapid infrared annealing technique

Li,

Jiang,

Luo

et al. 2023

J. Phys.: Conf. Ser.

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This paper proposes three engineering application technology applications for rapid infrared annealing (RIA): scanning annealing, lamp array preheating and scanning annealing, and lamp array annealing. For the dynamic scanning annealing method, the influence of the working distance from the infrared lamp to the amorphous indium tin oxide (ITO) film and the scanning speed on the heating of the film surface were studied. For lamp array preheating and scanning annealing, the attenuation of the compressive stress on the surface of the chemically strengthened glass under the condition of low temperature and the long holding time were revealed. For lamp array annealing, the influence of this technology on the optical and electrical properties of the ITO film and the surface compressive stress of chemically strengthened glass were studied. Using the lamp array preheating and scanning annealing and lamp array annealing technology, not only a crystalline ITO film with excellent optical and electrical properties and uniformity can be prepared quickly, but also the impact of the crystallization process on chemically strengthened glass can be reduced greatly.

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Structure and physical properties evolution of ITO film during amorphous-crystalline transition using a highly effective annealing technique

Cited by 21 publications

References 52 publications

Investigation of structural and electrical properties of ITO thin films and correlation to optical parameters extracted using novel method based on PSO algorithm

Investigation of structural and electrical properties of ITO thin films and correlation to optical parameters extracted using novel method based on PSO algorithm

Advanced textured monocrystalline silicon substrates with high optical scattering yields and low electrical recombination losses for supporting crack‐free nano‐ to poly‐crystalline film growth

Preparation of large-scale uniformly crystallized ITO thin films by rapid infrared annealing technique

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