Structure-induced highly selective adsorption and photocatalytic pollutant degradation performance of BiOBr

Photocatalysis Meets Piezoelectricity in a Type-I Oxygen Vacancy-Rich BaTiO3/BiOBr Heterojunction: Mechanism Insights from Characterizations to DFT Calculations

“…Recently, bismuth-based photocatalysts have attracted extensive attention due to their innocuity and stability. Among them, bismuth oxyhalides (BiOX, X = Cl, Br, and I) are regarded as one of the most promising candidates due to their unique layered structure, appropriate energy band structure, and superior chemical stability. , In BiOXs, bismuth oxybromide (BiOBr) has a band gap of 2.4∼2.9 eV and exhibits outstanding photocatalytic activity for the degradation of organic pollutants under visible light irradiation . However, the photocatalytic activity of individual BiOBr is still limited by the rapid e – –h + pair recombination .…”

Optoelectronic Memristive Synapse Behavior for the Architecture of Cu2ZnSnS4@BiOBr Embedded in Poly(methyl methacrylate)

“…Organic insulating poly­(methyl methacrylate) (PMMA) has been introduced in the medium layer to improve the performance reliability and long-term stability due to its small Young’s modulus, low processing temperature, and easy packaging . On this basis, as electron trapping/detrapping centers, inorganic materials, such as MoSe 2 and Fe 3 O 4 , can be inserted into PMMA to obtain resistive switching behaviors. , From another perspective, two-dimensional (2D) materials (e.g., MoS 2 , WS 2 , BN, BiOI) can also be coated on substrates to be applied in memristors using their advantages of charge separation and transfer. − In view of the easily regulated microstructures, especially the intrinsic interlaminar electrostatic fields between layers of positive [Bi 2 O 2 ] 2+ and negative bromide ions for efficient charge separation and transfer, ternary bismuth oxybromide (BiOBr, BOB, bandgap ∼2.5–2.9) was widely studied in photocatalysis. − As such, BOB should have extensive research attention as the resistive layer in memristors, but so far, there are few reports on it. In this work, for 2D sheet-like BOB, by coupling p-type narrow-band photosensitive Cu 2 ZnSnS 4 (CZTS, ∼1.5 eV) to compensate for its low excitation of O 2p orbital which inhibits extending the spectral response, the CZTS@BOB is embedded in PMMA film acting as switching layers.…”