Structure of a Zn monolayer on Ag(111) and Ag(110) substrates: An AES, LEED and STM study

High anisotropic inserted dendritic growth during first stage of Zn monolayer deposition on Ag(111) substrate

“…1 displays the intensities evolution of Zn (56 eV) and Ag (355 eV) Auger signals versus the Zn deposition time. One can clearly notice that the evolution of the Zn Auger peak intensity (solid squares) presents a delay at the beginning of the growth as it was previously observed [13]. After this delay, there is a quasi-linear increase of the Zn intensity up to a slope change (a break) at about 10 min of deposition.…”

“…In principle, the deposition of one Zn monolayer on Ag(111) should correspond to this last case. Nevertheless, we have shown in a previous paper [13] that one Zn ML on Ag(111) substrate gives rise to the MP formation as expected when adsorbed atoms are larger than substrate ones; the deposited Zn ML corresponded to a coverage  of the Ag(111) surface of 1.18. For the same kind of systems (similar to Zn/Ag(111)), the deposition of Co/Pt(111) with a coverage =1.07 was shown to lead to the expected Co quasi-pseudomorphic layer, i.e.…”

“…The experiments are performed in the same equipment described in the reference [13]. We used the same protocol of the sample preparation (cleaning procedure), the same Zn deposition method, and the same characterization tools (AES, STM and LEED).…”

“…Using Auger electron spectroscopy (AES), Maradj et al have showed that the monitoring of the growth kinetics of Zn on Ag(111) (i.e. the variation of the Zn Auger peak intensity versus the deposition time) reveals an unexpected delay at the beginning of the growth [13]. A similar delay in the growth onset was observed by Kourouklis et al and was shown to increase with the sample temperature and with the evaporation rate at a given temperature [15].…”

Growth and characterization of nickel oxide ultra-thin films

“…For all these reasons, it is mandatory to synthetize oxide thin films with high quality. Previously, we have studied the growth of ultrathin oxide films using atomic layer deposition and oxidation process [10][11][12][13][14][15]. In this process, one atomic monolayer (ML) of a metallic element is deposited, followed by oxidation through the exposure to molecular oxygen at room temperature (RT), and then annealed in ultrahigh vacuum (UHV) conditions.…”