Structure of epitaxial graphene on Ir(111)

Nucleation and growth of nickel nanoclusters on graphene Moiré on Rh(111)

“…So far, regular arrays of NCs were successfully assembled using surfaces such as alumina double layers on Ni 3 Al [2,3], vicinal Au(111) surfaces [4,5], reconstructed surfaces [6,7] or h-BN nanomesh [8,9]. Recently, graphene Moiré on close-packed metal surfaces like Pt(111) [10], Rh(111) [11], Ru(0001) [12,13], and Ir(111) [14,15] has been suggested to be a good candidate for the templated growth of clusters arrays. Recent works demonstrate that superlattices of metallic clusters of Re, W, Pt, and Ir on such graphene…”

“…One can also reasonably expect that either hcp or fcc regions of graphene Moiré on Rh(111) would act as well-defined energetic sinks for nucleation of clusters. On the other hand, obtained STM images show a distinctly different atomic structure within the Moiré unit cell on Rh(111), especially for the R 2 region [20], compared with graphene on Ir(111) [14] and Ru(0001) [12] which makes an a priori determination of the most probable nucleation centers for Ni cluster impossible.…”

Structure of graphene and its disorders: a review

“…For example, graphenenano-islands that are epitaxially grown on monocrystalline metal surfaces (i.e. Ir(111) [76,89], Co(0001) [77,90] and Pt(111) [91]) have mostly zigzag terminations, whereas those grown on 6H-SiC(0001) are dominated by armchair edges [75]. The constant-current STM (CC-STM) image of edges of graphene on Ir(111) can be seen in Figure 5(d), where the gray mesh indicates the moire superstructure on graphene, and the blue and yellow arrows represent the zigzag graphene edges on substrate surface and at substrate step edges respectively.…”

Optimizing long-range order, band gap, and group velocities for graphene on close-packed metal surfaces

“…The Ir(111) crystal was prepared by repeated cycles of Ar + ion sputtering at room temperature and at 1000 K, followed by annealing to 1500 K. The graphene layer was grown by exposing the Ir(111) surface at 1300 K to ethylene [15,16]. For the ethylene pressures and exposures used CVD growth is self-limiting and only a single graphene layer forms, which we confirmed by angle-resolved photoelectron spectroscopy (ARPES).…”

“…For the ethylene pressures and exposures used CVD growth is self-limiting and only a single graphene layer forms, which we confirmed by angle-resolved photoelectron spectroscopy (ARPES). The Ir cluster superlattice was grown by evaporating 0.15 ML Ir (one monolayer, ML, is defined as one atom per Ir substrate atom) at a substrate temperature of (375 ± 25) K. Under these conditions, exactly one Ir cluster with a mean cluster size of 13 atoms is formed per hcp region of the g/Ir(111)-(9.32 × 9.32) moiré [12,16]. Ir was evaporated from a current heated thin film plate with a cross section of 0.5 mm × 0.1 mm.…”