Low-pressure chemical vapor deposition allows one to grow high structural quality monolayer graphene on Ir(111). Using scanning tunneling microscopy, we show that graphene prepared this way exhibits remarkably large-scale continuity of its carbon rows over terraces and step edges. The graphene layer contains only a very low density of defects. These are zero-dimensional defects, edge dislocation cores consisting of heptagon-pentagon pairs of carbon atom rings, which we relate to small-angle in-plane tilt boundaries in the graphene. We quantitatively examined the bending of graphene across Ir step edges. The corresponding radius of curvature compares to typical radii of thin single-wall carbon nanotubes.

Epitaxial graphene on Ir(111) prepared in excellent structural quality is investigated by angle-resolved photoelectron spectroscopy. It clearly displays a Dirac cone with the Dirac point shifted only slightly above the Fermi level. The moiré resulting from the overlaid graphene and Ir(111) surface lattices imposes a superperiodic potential giving rise to Dirac cone replicas and the opening of minigaps in the band structure.

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The nonlocal van der Waals density functional approach is applied to calculate the binding of graphene to Ir(111). The precise agreement of the calculated mean height h = 3.41  Å of the C atoms with their mean height h = (3.38±0.04)  Å as measured by the x-ray standing wave technique provides a benchmark for the applicability of the nonlocal functional. We find bonding of graphene to Ir(111) to be due to the van der Waals interaction with an antibonding average contribution from chemical interaction. Despite its globally repulsive character, in certain areas of the large graphene moiré unit cell charge accumulation between Ir substrate and graphene C atoms is observed, signaling a weak covalent bond formation.