Structure of ordered oxide on InAs(100) surface

Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing

“…Released As atoms, in turn, diffuse toward the surface. This phenomenon is energetically much more favorable than, for example, As–O bonding or strain inducing short O–O dimer bonds on the surface. , In 2 O has been usually shown to cause +0.5 eV shift at the vacuum-InAs(100) surfaces, but in Figure it can be seen that the Al 2 O 3 /crystalline oxide interfaces do not exactly exhibit this fingerprint +0.5 eV component. However, in the present measurements the oxidized InAs interfaces lie clearly below the topmost Al 2 O 3 (12 nm) film, deep inside a solid, which can cause variation in the potential as discussed above.…”

“…This phenomenon is energetically much more favorable than, for example, As-O bonding or strain inducing short O-O dimer bonds on the surface. 34,40 In 2 O has been usually shown to cause +0.5 eV shift at the vacuum-InAs(100) surfaces, but in Fig. 2 it can respectively.…”

Al In1−As Sb1− alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy

“…The InAs oxide removal process occurs at a substrate temperature of 520°C. This process is accompanied by a surface reconstruction transition monitored by RHEED from a 3× to 2× reconstruction along the [110] azimuth under an overpressure of arsenic [7] at a flux of 8x10 -6 mbar. A thermal anneal for 30 min was carried out at a temperature 15ºC higher to complete the native oxide desorption.…”