Structure of SiO2 Films on Silicon as Revealed by Oxygen Transport

Revesz, A. G.; Mrstik, B. J.; Hughes, H.L.; McCarthy, Daniel

doi:10.1149/1.2108624

Cited by 37 publications

(26 citation statements)

References 17 publications

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“…Thus, the only oxide that can form during this experiment is SiO 2 . At this temperature silica is generally amorphous [29], in good agreement with the XRD spectrum (Fig. 3) which shows only the spectral lines of the base alloy.…”

Section: Transition From Internal To External Oxidationsupporting

confidence: 86%

Anomalous oxidation of Fe–Si alloys under a low oxygen pressure at 800 °C

et al. 2015

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Section: Transition From Internal To External Oxidationsupporting

confidence: 86%

Anomalous oxidation of Fe–Si alloys under a low oxygen pressure at 800 °C

et al. 2015

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“…Beyond 1250 ∘ C, SiO 2 becomes amorphous and less viscous. Kinetics of oxidation of Si is reported to linear to parabolic and growth of oxide layer following parabolic kinetics [23,24]. The activation energy for silica scale growth in 900-1200 ∘ C was reported to be 28.5 kcal/mol [23].…”

Section: Discussionmentioning

confidence: 99%

Kinetics of oxide scale growth on a (Ti, Mo)₅Si₃ based oxidation resistant Mo-Ti-Si alloy at 900-1300^∘C

Majumdar

Singh

Pandey

et al. 2019

High Temperature Materials and Processes

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High-temperature oxidation behaviour of Mo-40Ti-30Si (at.%) alloy was investigated in the temperature regime of 900-1300∘C in air. Isothermal weight change data recorded up to 100 h of exposure revealed parabolic weight gain kinetics at all the tested temperatures. The protective oxide scale composed with SiO2 (silica) and TiO2 (titania) forming a duplex oxide microstructure consisting of TiO2 particles embedded in the continuous SiO2 matrix. The oxide scale showed parabolic growth kinetics, and the activation energies for the scale growth were found to be 72.2 kJ/mol in 900-1200∘C and 324.9 kJ/mol in 1200-1300∘C. The kinetics of the protective scale growth on the alloy surface was mainly controlled by the growth of the silica film and the inward diffusion of oxygen through the duplex oxide layer.

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“…Then, we treated the power of oxidation time in eq. ( 5) as a fitting parameter to improve the simulation performed in an oxide thickness range of 2 -60 nm by Revesz et al 66) By a least-squares fit to the data using…”

Section: Growth Kinetics Of First and Second Oxide Layers Onmentioning

confidence: 99%

Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy

Ogawa

Takakuwa

2006

jjap

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The growth and decomposition kinetics of very thin oxides on Si(001) surfaces were investigated by reflection high-energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) to monitor the reaction rates of oxide growth and decomposition in real time, and changes in surface structure and interface morphology simultaneously. The oxides prepared by stopping the second oxide layer growth at various coverages following the first oxide layer growth by Langmuirtype adsorption at 500 C under an O 2 pressure of 2:6 Â 10 À4 Pa were isothermally annealed by increasing temperature from 500 to 666 C at the same time that O 2 gas was quickly evacuated. It was observed that (1) oxide thickness continued to decrease significantly as measured on the basis of changes in O KLL Auger electron intensity ÁI O-KLL before voids appeared at a nucleation time t N as recognized by the appearance of half-order spots in RHEED patterns, (2) the SiO 2 /Si interface morphology was considerably roughened corresponding to ÁI O-KLL during void nucleation as observed by the evolution of the RHEED intensity of bulk diffraction spots ÁI bulk , (3) the ratio of ÁI bulk to ÁI O-KLL was almost constant, and (4) oxide decomposition rate during void nucleation, which was approximately given by ÁI O-KLL =t N , showed a good linear correlation with the second oxide layer growth rate immediately before starting the decomposition reaction. The good correlation between ÁI O-KLL =t N and clearly indicates that the rate-limiting reaction of the second oxide layer growth is closely related to that of the oxide decomposition during void nucleation. All the above-mentioned observations can be comprehensively interpreted using a reaction model proposed for the rate-limiting reactions of oxide growth and decomposition, in which the point defect generation (emitted Si atoms + vacancies) caused by the strain due to the volume expansion of oxidation plays a crucial role because of the high reactivity of the emitted Si atoms and vacancies with dangling bonds. Under an O 2 atmosphere, both emitted Si atoms and vacancies are the preferential adsorption sites of O 2 molecules in the oxide and at the SiO 2 /Si interface, respectively. The oxide can be decomposed by the emitted Si atoms to produce SiO molecules, which desorb from the surface, leading to oxide removal in vacuum with SiO 2 /Si interface morphology roughening, but may be oxidized within the oxide under an O 2 atmosphere.

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Structure of SiO2 Films on Silicon as Revealed by Oxygen Transport

Cited by 37 publications

References 17 publications

Anomalous oxidation of Fe–Si alloys under a low oxygen pressure at 800 °C

Anomalous oxidation of Fe–Si alloys under a low oxygen pressure at 800 °C

Kinetics of oxide scale growth on a (Ti, Mo)₅Si₃ based oxidation resistant Mo-Ti-Si alloy at 900-1300^∘C

Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy

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Structure of SiO2 Films on Silicon as Revealed by Oxygen Transport

Cited by 37 publications

References 17 publications

Anomalous oxidation of Fe–Si alloys under a low oxygen pressure at 800 °C

Anomalous oxidation of Fe–Si alloys under a low oxygen pressure at 800 °C

Kinetics of oxide scale growth on a (Ti, Mo)5Si3 based oxidation resistant Mo-Ti-Si alloy at 900-1300∘C

Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy

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Kinetics of oxide scale growth on a (Ti, Mo)₅Si₃ based oxidation resistant Mo-Ti-Si alloy at 900-1300^∘C