Structure of V-shape twinned VO2 nanocrystals epitaxially grown on sapphire

Synthesis, metal–insulator transition, and photoresponse characteristics of VO2 nanobeams via an oxygen inhibitor-assisted vapor transport method

“…, the orientation of the lateral planes of the substrate). 49–51 On the SiO 2 /Si substrate, the laterally random orientation of NBs was derived from the amorphous nature of the oxide layer (lack of epitaxial relationship to the substrate). In contrast, on the c-cut sapphire substrate, high structural correlations ( i.e.…”

“…This was in agreement with prior reports that the growth orientation of VO 2 NBs can be templated by the polarity of the substrate (i.e., the orientation of the lateral planes of the substrate). [49][50][51] On the SiO 2 /Si substrate, the laterally random orientation of NBs was derived from the amorphous nature of the oxide layer (lack of epitaxial relationship to the substrate). In contrast, on the c-cut sapphire substrate, high structural correlations (i.e., epitaxial relationships) existed between the VO 2 (M) and the substrates.…”

VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching

“…This is emphasised by the complex transformation of VO (B) to VO ; it involves an initial disordering step followed by a reordering into VO [ 29 , 30 ]. The (110) surface of tetragonal VO —corresponding to the (011) surface of the room temperature monoclinic phase—is predicted to be energetically favourable [ 31 ] and it was observed to form surfaces of crystalline VO nanoparticles [ 32 , 33 ]. Returning to the XRD of the annealed crystal, the additional peaks in the –2 scan are attributed to VO <110> and <011> [ 34 ], V O <001>, <010> and <102> [ 35 ] and V O <001> [ 25 ].…”