Structure, thermally and optically induced effects in amorphous As2Se3 films prepared by pulsed laser deposition

Němec, Petr; Jedelský, J.; Frumar, M.; Štábl, M.; Vlček, M.

doi:10.1016/j.jpcs.2004.01.016

Cited by 48 publications

(42 citation statements)

References 11 publications

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“…The films prepared by PLD technique exhibit sharp step of index of refraction between the substrate and the film [15] and, as we have proved, a better adhesion than the thermally evaporated films (higher energy of vapor 'molecules' or evaporated fragments). Better adhesion was found for all films prepared in our laboratory [11][12][13][14]28,111] and also by others. The density of deposited films is often higher due to higher kinetic energy of vapor particles.…”

Section: General Characteristics Of Pld Filmssupporting

confidence: 56%

“…The structure and properties of PLD films are very often similar to those of annealed films and bulk glasses [13]. The films prepared by PLD technique exhibit sharp step of index of refraction between the substrate and the film [15] and, as we have proved, a better adhesion than the thermally evaporated films (higher energy of vapor 'molecules' or evaporated fragments).…”

Section: General Characteristics Of Pld Filmssupporting

confidence: 52%

“…The number of papers devoted to study of selenides-or tellurides-based chalcogenide films prepared by PLD is lower than the number of papers devoted to sulfides [2,11,13,14,24,[26][27][28]50,69,102,[108][109][110]. PLD of selenium thin films (1064 and 532 nm laser pulses and external electric field) and their characterization revealed large amount of splashed droplets.…”

Section: The Pld Of Selenium and Tellurium Containing Glassesmentioning

confidence: 99%

“…By condensation of nano-particles, the fractal structures can form on a substrate. As a result, the obtained film can be a mixture of fragments, nano-particles and amorphous and/or crystalline polymers that, due to high temperature and high kinetic energy, can react among themselves forming polymers similar to those in original target [13] or forming a new over-saturated material. The composition and structure of the final film depends on the composition of the target on conditions of the whole PLD process.…”

Section: Excitation Evaporation and Plume Formationmentioning

confidence: 99%

“…Homogeneous and amorphous As 2 Se 3 thin films were prepared by PLD method in [13]. The growth rate of AsSe thin films depended significantly on energy density of the laser beam used for PLD.…”

Section: The As-se Filmsmentioning

confidence: 99%

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Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors

Frumar

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et al. 2006

Journal of Non-Crystalline Solids

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135

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Section: General Characteristics Of Pld Filmssupporting

confidence: 56%

Section: General Characteristics Of Pld Filmssupporting

confidence: 52%

Section: The Pld Of Selenium and Tellurium Containing Glassesmentioning

confidence: 99%

Section: Excitation Evaporation and Plume Formationmentioning

confidence: 99%

Section: The As-se Filmsmentioning

confidence: 99%

See 3 more Smart Citations

Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors

Frumar

Frumarová

Němec

et al. 2006

Journal of Non-Crystalline Solids

Self Cite

135

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Ternary CdS_1–xSe_xnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Azhniuk

Dzhagan

Solonenko

et al. 2021

J Raman Spectroscopy

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Micro‐Raman spectra of amorphous As–Se–S:Cd films prepared by thermal evaporation on silicon and silicate glass substrates measured at different laser power densities show the formation of CdS1–xSex nanocrystals in the As–Se–S:Cd film under laser beam illumination due to a photoinduced material transfer and photoenhanced diffusion in the laser spot area. The material transfer and the photoenhanced diffusion are caused by a non‐thermal interaction of light with the amorphous As–Se–S:Cd films. The chemical composition of the CdS1–xSex nanocrystals can be determined from the difference of the CdSe‐like and CdS‐like LO phonon wavenumbers in the Raman spectra. The photoluminescence peak energies are in agreement with the CdS1–xSex composition, with the average nanocrystal size being somewhat above the exciton Bohr radius.

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Laser desorption ionization time‐of‐flight mass spectrometric study of binary As‐Se glasses

Pangavhane

Němec

Wágner

et al. 2010

Rapid Comm Mass Spectrometry

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Binary chalcogenide As-Se glasses and their thin films are important for optics, computers, materials science and technological applications. To increase understanding of the properties of thin films fabricated by plasma deposition techniques, more information concerning the physics of plasma plume is needed. In this study the formation of clusters in plasma plume from different As-Se glasses by laser desorption ionization (LDI) or laser ablation (LA) was studied by time-of-flight mass spectrometry (TOF MS) in positive and negative ion modes. Formation of a number of As(p)Se(q) singly charged clusters As(3)Se(q)(+) (q = 1-5), AsSe(q)(-) (q = 1-3), As(2)Se(q)(-) (q = 2-4), and As(3)Se(q)(-) (q = 2-5) was found from As-Se glasses with the molar ratio As:Se in the range from 1:2 to 7:3. The stoichiometry of the As(p)Se(q) clusters was determined via isotopic envelope analysis and computer modeling. The structure of the clusters is proposed and the relationship to the structure of the parent glasses, as also suggested by Raman scattering spectra, is discussed.

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Structure, thermally and optically induced effects in amorphous As2Se3 films prepared by pulsed laser deposition

Cited by 48 publications

References 11 publications

Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors

Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors

Ternary CdS_1–xSe_xnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Laser desorption ionization time‐of‐flight mass spectrometric study of binary As‐Se glasses

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Structure, thermally and optically induced effects in amorphous As2Se3 films prepared by pulsed laser deposition

Cited by 48 publications

References 11 publications

Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors

Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors

Ternary CdS1–xSexnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Laser desorption ionization time‐of‐flight mass spectrometric study of binary As‐Se glasses

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About

Ternary CdS_1–xSe_xnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement