2017 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS) 2017
DOI: 10.1109/inis.2017.22
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STT-MRAM for Low Power Access for Read-Intensive Parallel Deep-Learning Architectures

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“…However, this pace of scaling is beginning to stop and it will not be sustainable in the future for technological and economic reasons [323]. Researchers are currently exploring new physical possibilities and a lot of effort is placed in the emerging memories, such as Phase Change Memories (PCMs) [324] [325], Spin-Torque-Transfer Magnetoresistive RAM (STT-MRAM) [326] [327], or Resistive RAM (ReRAM) [328] [327]. Beyond emerging memories, several new technologies are being studied, such as Tunnel FETs, organic FETs, molecular transistors, and spintronic devices.…”
Section: Challenges and The Road Aheadmentioning
confidence: 99%
“…However, this pace of scaling is beginning to stop and it will not be sustainable in the future for technological and economic reasons [323]. Researchers are currently exploring new physical possibilities and a lot of effort is placed in the emerging memories, such as Phase Change Memories (PCMs) [324] [325], Spin-Torque-Transfer Magnetoresistive RAM (STT-MRAM) [326] [327], or Resistive RAM (ReRAM) [328] [327]. Beyond emerging memories, several new technologies are being studied, such as Tunnel FETs, organic FETs, molecular transistors, and spintronic devices.…”
Section: Challenges and The Road Aheadmentioning
confidence: 99%