Studies of dislocation loops produced by irradiation of ZnO in a high-voltage electron microscope

Yoshiie, T.; Iwanaga, Hiroshi; Shibata, N.; Suzuki, Kunio; Takeuchi, Shin

doi:10.1080/01418618008243897

Cited by 17 publications

(13 citation statements)

References 6 publications

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“…These defects are identified to be dislocation loops on the prismatic planes. In the literature, prismatic loops are commonly found in hexagonal materials, for example, SiC and ZnO . The average diameter of the prismatic loops observed here is ≈30 nm.…”

Section: Resultssupporting

confidence: 54%

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Wang

Huynh

Liao

et al. 2020

Physica Status Solidi (b)

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The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (10true1¯4) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 108 to 3 × 107 cm−2, determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.

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Section: Resultssupporting

confidence: 54%

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Wang

Huynh

Liao

et al. 2020

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…In the latter regions two types of interstitial loops were identified: perfect loops lying in the prismatic planes and 3A faulted loops lying in the basal plane. No 1A faulted loops were observed in these regions [11][12][13][14].…”

Section: Discussionmentioning

confidence: 95%

“…The difference in the defect structure of ZnO resulting from either ion bombardment (present work) or high energy electron irradiation [11][12][13][14] is not fully understood. According to Yoshiie et al [13][14], the loop nucleation process in semiconducting crystals is an heterogeneous process with some special site (impurity atoms, defect clusters) as the nucleation site of the crystal.…”

Section: Discussionmentioning

confidence: 99%

“…The nature and efficiency of the nucleation site may depend on: i) The nature of the incident particle: according to [15], charged particle damage (high transmitted energy, low particle flux) is characterized by a small number of large disordered regions superimposed upon a larger relative number of small clusters of defects, whereas almost all primary damage due to electron irradiation (low transmitted energy, high electron flux) is in the form of single interstitial vacancy pairs. ii) The purity of the material: the material used in the electron irradiation experiments was ZnO films prepared in the form of ribbons thin enough for electron microscope observations, by hydrolytic reaction of ZnS vapor at 1100 °C [13][14]. The material used in the present investigation was bulk doped ZnO. iii) The irradiation temperature.…”

Section: Discussionmentioning

confidence: 99%

“…According to Yoshiie et al [13][14], the loop nucleation process in semiconducting crystals is an heterogeneous process with some special site (impurity atoms, defect clusters) as the nucleation site of the crystal. The nature and efficiency of the nucleation site may depend on: i) The nature of the incident particle: according to [15], charged particle damage (high transmitted energy, low particle flux) is characterized by a small number of large disordered regions superimposed upon a larger relative number of small clusters of defects, whereas almost all primary damage due to electron irradiation (low transmitted energy, high electron flux) is in the form of single interstitial vacancy pairs.…”

Section: Discussionmentioning

confidence: 99%

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