Studies of far-infrared magneto-photoconductivity of D− centers in GaAs/AlxGa1−xAs multiple quantum wells

Shen, Ji Lin; Lin, Tai‐Yuan; Chen, Y. F.; Chang, Yen-Jen

doi:10.1016/s0038-1098(99)00417-2

Solid State Communications

1999

DOI: 10.1016/s0038-1098(99)00417-2

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Studies of far-infrared magneto-photoconductivity of D− centers in GaAs/AlxGa1−xAs multiple quantum wells

Ji Lin Shen

Tai‐Yuan Lin

Y. F. Chen

et al.

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2000

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“…There is much evidence from magneto-optic studies for the formation of stable D − centres on Si donors in GaAs/GaAlAs quantum well structures [17][18][19][20]. The binding energy is greatly enhanced in the quasi-two dimensional systems compared with the bulk [21], where D − centres are only populated under certain sample and experimental conditions [22].…”

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Nature of Friedel oscillations around Si dopants in the GaAs(110) accumulation layer

Inglesfield

Boon

Crampin

2000

J. Phys.: Condens. Matter

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The screening of sub-surface Si impurities in an accumulation layer at the GaAs(110) surface is calculated. Such an accumulation layer can be induced by a scanning tunnelling microscope tip, and surface Friedel oscillations have been imaged around the Si dopants. This study uses the effective mass approximation to describe the electrons in the GaAs conduction band, and a fitted model potential for the impurity. Two-dimensional effects dominate, with a doubly occupied bound state pulled off the lowest sub-band by the impurity, and a depletion of one electron in the conduction states. The bound state gives a large central peak in the surface induced charge, with the Friedel oscillations coming from the change in the conduction states. To explain the amplitude of the observed oscillations, it is necessary to reduce the tunnelling contribution from the bound state.

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mentioning

confidence: 99%

Nature of Friedel oscillations around Si dopants in the GaAs(110) accumulation layer

Inglesfield

Boon

Crampin

2000

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

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Studies of far-infrared magneto-photoconductivity of D− centers in GaAs/AlxGa1−xAs multiple quantum wells

Cited by 1 publication

References 22 publications

Nature of Friedel oscillations around Si dopants in the GaAs(110) accumulation layer

Nature of Friedel oscillations around Si dopants in the GaAs(110) accumulation layer

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