Studies of Hot-Electron Degradation in GaN HEMTs with Varying Gate Recess Depths

Jha, Shrawan Kumar; Leung, B.H.; Surya, C.; Pilkhuhn, M.H.

doi:10.1109/commad.2004.1577485

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…Two approaches have been proposed to enhance the modulation capability of the MIS field plate to the 2DEG channel beneath, including a partially recessed barrier [5,14] and a 3D tri-anode [15]. However, the etch damage to the AlGaN barrier in the Schottky region or field plate region for these two approaches might bring about potential reliability issues [16].…”

Section: Introductionmentioning

confidence: 99%

Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

Kang¹,

Zheng²,

Wu³

et al. 2021

Semicond. Sci. Technol.

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In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GET) design and assistance with high-quality low-pressure chemical vapor deposition SiN x , a low reverse leakage current (∼10 nA mm −1 @−600 V) and a high reverse breakdown voltage of over 1.78 kV (@1 µA mm −1 ) are obtained. At the same time, we achieve a low turn-on voltage of 0.57 V and a low differential on-state resistance R on,sp of 1.49 mΩ cm 2 for thin-barrier GET SBDs with an anode-to-cathode distance (L AC ) of 15 µm, yielding a Baliga's figure of merit of 2120 MW cm −2 . Moreover, this proposed diode process flow is compatible with AlGaN/GaN high-electron-mobility transistors, which is promising for its integration in the smart GaN platform.

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Section: Introductionmentioning

confidence: 99%

Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

Kang¹,

Zheng²,

Wu³

et al. 2021

Semicond. Sci. Technol.

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“…We suggest that either the dry etching recipe of the gate recess should be optimized or the post-annealing should be implemented for alleviating the effect of the plasma-induced degradation on the Schottky gate as shown in Refs. [21] and [22]. Recess etching has an influence on current collapse due to surface and bulk traps.…”

Section: Measurement and Discussionmentioning

confidence: 99%

Characterization of Al ₂ O ₃ /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Ma¹,

Cai-Yuan²,

Yu³

et al. 2011

Chinese Phys. B

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In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs), we demonstrate better performances of recessed-gate Al 2 O 3 MIS-HEMTs which are fabricated by Fluorine-based Si 3 N 4 etching and chlorinebased AlGaN etching with three etching times (15 s, 17 s and 19 s). The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of AlGaN/GaN HEMT. Through the recessed-gate etching, the transconductance increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with τ it =(0.20-1.59) μs and D it =(0.55-1.08)×10 12 cm −2 •eV −1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AlGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time (15 s in this paper) can enhance the performances of MIS-HEMTs effectively.

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“…In previous reports, the presence of defects in HEMTs based on GaN affects the density of electrons in the channel layer, which has an impact on the reliability of the devices [12]. It has been reported that thermal electron stress experiments lead to a sharp increase in the density of defects at the AlGaN/GaN heterojunction interface and rapid degradation of device performance [13,14]. In addition, there are a lot of different types of defects that impact the reliability of the device in the AlGaN and GaN bulk.…”

Section: Introductionmentioning

confidence: 99%

Electronic properties and passivation mechanism of AlGaN/GaN heterojunction with vacancies: a DFT study

et al. 2023

Phys. Scr.

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A significant issue for GaN-based high-electron-mobility transistors (HEMTs) in high power devices is the material defect, particularly the defect states generated by the defects, which has a negative impact on the device carrier concentration and carrier transport. Based on density functional theory (DFT), we investigate the microscopic properties of different type point vacancies in the AlGaN/GaN heterojunction. It is found that N vacancy introduces defect states near the conduction band minimum (CBM) of the GaN layer and AlGaN/GaN interface. Ga and Al vacancies introduce defect states near the valence band maximum (VBM) in bulk and interface of AlGaN/GaN heterojunction. Moreover, Al vacancy is more likely to be an effective candidate for acceptor defect than Ga vacancy. We further study several AlGaN/GaN interface passivation schemes by introducing F, V group element P, and III group element B at the AlGaN/GaN heterojunction interface to analyze the passivation mechanism. According to the results of the passivation models, B passivation of Ga and Al vacancies is an effective method to completely remove the defect states from Ga and Al vacancy defects. Combining the III and V groups elements into the passivated process may be effective in achieving high-quality AlGaN/GaN heterojunction interface for the future GaN-based HEMTs fabrication.

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Studies of Hot-Electron Degradation in GaN HEMTs with Varying Gate Recess Depths

Cited by 5 publications

References 11 publications

Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

Characterization of Al ₂ O ₃ /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Electronic properties and passivation mechanism of AlGaN/GaN heterojunction with vacancies: a DFT study

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Studies of Hot-Electron Degradation in GaN HEMTs with Varying Gate Recess Depths

Cited by 5 publications

References 11 publications

Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Electronic properties and passivation mechanism of AlGaN/GaN heterojunction with vacancies: a DFT study

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Characterization of Al ₂ O ₃ /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths