Studies of implanted iron in silicon by channeling and Rutherford backscattering

Abstract

Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. We have found that the critical fluence of 100-keV iron implanted into silicon at room temperature is ∼2.5×1014 Fe/cm2, and that iron atoms are gettered by silicon oxidation. In this supersaturated region iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (≥1100 °C) but not at all during low-temperature annealing (≤1000 °C) in dry nitrogen ambient.

Microstructure and nanomechanical properties of Fe+ implanted silicon

“…This fact tends to confirm that Fe is in the Si amorphous supersaturated solution after implantation with fluences between 5 × 10 15 cm −2 and 2 × 10 17 cm −2 . This result is somehow expected after the work of Wang et al [21], who predicted a critical fluence for the amorphization of Si of approximatelly 2.5 × 10 14 cm −2 . Surprisingly, for the low fluence samples, the X-ray diffractograms do not show any peaks corresponding to the precipitates observed by SEM at any of the annealing temperatures (Fig.…”