Studies of radiation tolerance and optical absorption bands of CsI(Tl) crystals

Chowdhury, M.; Watts, S.; Imrie, D. C.; McKemey, A. K.; Holmes-Siedle, Andrew

doi:10.1016/s0168-9002(99)00471-4

Cited by 18 publications

(9 citation statements)

References 19 publications

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“…Induced absorption bands can be removed by annealing at 150 C [55]. An attempt was made to interpret the induced absorptions in the following way: the absorption peak at 840 nm as an (perturbed) F-centre band, the other one at 980 nm as an F 3 -centre band and six absorption bands at 355, 390, 430, 460, 520 and 560 nm as transitions to the excited states of an F centre [54] or to the so-called L bands [56]. Table 2 displays the positions of the absorption bands related to the F and V K (a hole trapped by two adjacent halide anions) centres in Cs halides as well as the onset temperatures of their ionisation and migration, respectively.…”

Section: Tl and Na-doped Csi Single Crystalsmentioning

confidence: 99%

“…Even if one of the conclusions of CsI-related contributions to the Crystal 2000 conference [66] was that the presence of Tl and Na ions is not the primary cause for CsI : Tl(Na) radiation damage, more recent papers do claim that an increase of the Tl concentration results in the deterioration of radiation resistance [54,56]. The reported higher damage of Tl-doped samples might be connected with the above mentioned ability to stabilise V K centres nearby the Tl ion and to form temporary Tl 0 centres.…”

Section: Tl and Na-doped Csi Single Crystalsmentioning

confidence: 99%

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Wide Band Gap Scintillation Materials: Progress in the Technology and Material Understanding

Nikl

2000

phys. stat. sol. (a)

366

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Luminescence and scintillation characteristics of four selected material systems, namely CsI : Tl(Na), CeF 3 , PbWO 4 and Ce-doped aluminium perovskites XAlO 3 : Ce (XY, Lu, Y±Lu) are reviewed. The progress in their physical understanding and related optimisation of their characteristics and technology are demonstrated. The important role of various defect states in the scintillator performance of these materials is stressed, which has led to the need for a deeper study of the processes of energy transfer and storage to achieve their intrinsic limits and full exploitation in scintillation detectors.

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Section: Tl and Na-doped Csi Single Crystalsmentioning

confidence: 99%

Section: Tl and Na-doped Csi Single Crystalsmentioning

confidence: 99%

Wide Band Gap Scintillation Materials: Progress in the Technology and Material Understanding

Nikl

2000

phys. stat. sol. (a)

366

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“…4 exhibits well-resolved absorption bands which are marked by arrows. Significantly, all the 430-, 520-and 560-nm bands have been reported to be a family of F-center absorption bands [1], [18], [19]. Most important is the fact that the 840-nm absorption band clearly resolved in Fig.…”

Section: Resultsmentioning

confidence: 99%

Radiation defects manipulation by ultrasound in ionic crystals

Ostrovskii

Ostrovskaya

Korotchenkov

et al. 2005

IEEE Trans. Nucl. Sci.

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The radiation-induced optical absorption in ionic crystals is remarkably removed by a room-temperature ultrasonic treatment of the crystals. It is shown that the effect can be explained by defect migration processes occurring in ultrasonic fields. The experimental results display features consistent with a recent theory of the quantum diffusion. This new method of a cold annealing of radiation defects in solids can be termed as ultrasonic defect manipulation.

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“…In literature these bands have been related to the formation of interstitials [15], or to F Al centers [16] (an F center near a cationic impurity) or to oxygen related impurities [12]. In any case, Tl + seems to play a fundamental role in the radiation hardness of the crystals.…”

Section: Introductionmentioning

confidence: 99%

“…In any case, Tl + seems to play a fundamental role in the radiation hardness of the crystals. For instance, Chowdhury et al found that highly-doped Tl crystals (P1000 ppm) are always less radiation-tolerant than low-Tl crystals (6600 ppm) [16].…”

Section: Introductionmentioning

confidence: 99%