1969
DOI: 10.1016/0003-4916(69)90034-7
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Studies of small-polaron motion IV. Adiabatic theory of the Hall effect

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Cited by 722 publications
(282 citation statements)
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“…This is the basis for our analysis of the ρ(T) data using polaron models. 26,27 It is interesting to note that the electrical resistivity decreases with an increase of x up to x=0.2. For the subsequent increase in x to 0.3, resistivity increased.…”
Section: A Structure and Transport Studiesmentioning
confidence: 99%
“…This is the basis for our analysis of the ρ(T) data using polaron models. 26,27 It is interesting to note that the electrical resistivity decreases with an increase of x up to x=0.2. For the subsequent increase in x to 0.3, resistivity increased.…”
Section: A Structure and Transport Studiesmentioning
confidence: 99%
“…Alternatively stated, the Si dopants are fully ionized, and there is no activation energy associated with carrier generation. This allows estimation 45 of the drift mobility using eqn (2),…”
Section: Seebeck Coefficientmentioning
confidence: 99%
“…S of boron-rich ICSs can be explained by variable-range hopping-type conduction 10) (4) or phonon-assisted hopping-type conduction 8) (5).…”
Section: Resultsmentioning
confidence: 99%
“…6,7) Furthermore, the conduction mechanism of both pure and metal-doped -Boron is considered to be hopping conduction. In the case of phonon-assisted hopping conduction, 8) which is typical of boron carbide, 9) S have a tendency to increase with increasing temperature. This is because the mobility of carriers is thermally activated, whereas the concentration of carriers is almost constant.…”
Section: Introductionmentioning
confidence: 99%