Thermoelectric properties of metal (V, Co, Zr, Sr, W)-doped -rhombohedral boron (-Boron) were examined in the temperature range from 353 K to 1073 K. Doping with V (V 1:5 B 105 ), which preferentially occupy the A 1 sites, results in a great increase of electrical conductivity and a negative Seebeck coefficient S, while doping Co, Zr, Sr or W (M 1:0 B 105 , M ¼ Co, Zr, Sr or W) also increases the though S remains positive. By crushing and hot pressing as-melted samples, the thermal conductivity was decreased to almost half of that of arc-melted samples. As a result, V-doped and hot-pressed n-type -Boron had a ZT value of about 0.01 at 885 K, which approaches that of boron carbide, which exhibits the maximum ZT value among the boron-rich icosahedral cluster solids.