Studies of surface states in Bi2Se3 induced by the BiSe substitution in the crystal subsurface structure

The effect of mechanical strain on the Dirac surface states in the (0001) surface and the cohesive energy of the topological insulator Bi2Se3

“…Interestingly, after including the SOC, the band structure shows an expansion of the [Fig. S4 b], the bulk consistent with = 0.38 the previous report 2,11,34,36 . The representative total DOS of the (0001) surface of with orbital overlap and .…”

“…Before the studies of the (0001) surface band structure of the , the bulk band to the reported experimental 30,31,32 and theoretical 33,34 values. The kinetic energy in the Hamiltonian without spin-orbit coupling term doesn't depend on the spin degrees of freedom.…”

Dynamical Study of the Origin of the Charge Density Wave in $A$V$_{3}$Sb$_{5}$ ($A=$K, Rb, Cs) Compounds

“…However, as we show earlier, the distorted kagome-like plane disturbs the positions of the Sb atoms of neighboring layers, so consequently, the influence of 3D (bulk) CDW is also noticeable in this surface. Similar effect was observed by studying the surface states of Bi 2 Se 3 where the surface charges were modified by the vacancies or atom substitution in the interior of bulk material [105][106][107], due to realization of long-range orbital hybridization [108]. Concluding, the observed stripe-like superstructure is related to a subtle effects of the surface reconstruction and the atomic orbitals hybridization rather than an exact 3D CDW emerging in the AV 3 Sb 5 .…”

Influence of Doping on the Topological Surface States of Crystalline Bi2Se3 Topological Insulators

“…The topography images of all the investigated samples reveal a large number of triangle-shaped defects at the surface ( Figure 2 ). Some of the previous works based on a combination of STM research and Density Functional Theory (DFT) simulation state that the defects exhibiting the same pattern of surface charge distribution are recognized as Bi-Se antisites [ 23 , 30 ]. However, as the dominant type of defects, the authors of [ 23 ] found Se vacancies.…”