Studies on ac response of zinc oxide pellets

Sahay, P. P.; Tewari, S.; Nath, R.; Jha, Sanjeev; Shamsuddin, M.

doi:10.1007/s10853-008-2642-x

Cited by 53 publications

(16 citation statements)

References 32 publications

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“…The value of R g is obtained directly from 8.0x10 the high frequency intercept of the impedance arc on the Z 0 axis. Further, a reduction in the size of the semi-circular arc with a rise in temperature was observed, consistent with decreasing values of R g and R gb similar to those reported by Sahay et al [23]. From this impedance plot, a relaxation time constant (s z ) has been calculated from the summits of each curves following x m s z = 1, where x m is the summit frequency.…”

Section: Impedance Formalismsupporting

confidence: 87%

Study of dielectric relaxation processes in printable zinc oxide films on transparent substrates

Paul

Harris

Sharma

et al. 2015

J Mater Sci: Mater Electron

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AC impedance spectroscopic measurements have been performed on sol-gel derived zinc oxide (ZnO) films on transparent fluorine-doped tin oxide coated glass substrates in the frequency range 10 -2 to 10 6 Hz over the temperature range -185 to ?25°C (88-298 K). The relaxation behaviour of the nanocrystal line ZnO thin film can be described in terms of the Debye model giving an interpretation of the semi-circular relaxation phenomenon within the given temperature range. Two different relaxation times were obtained from impedance (Z) and electric modulus (M) studies of the devices and the multiple hopping of charge carriers between trap sites in grain and grain-boundary regions is believed to be responsible for charge transport. The values of activation energies for trap levels obtained from AC conductivity study are 0.0153 and 0.0487 eV which are close to the activation energies obtained from DC electrical measurement for temperature region between 88 and 178 K and 179 and 298 K, respectively.

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Section: Impedance Formalismsupporting

confidence: 87%

Study of dielectric relaxation processes in printable zinc oxide films on transparent substrates

Paul

Harris

Sharma

et al. 2015

J Mater Sci: Mater Electron

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“…Similarly the CBH model was observed for Mn doped ZnO, prepared by using pulsed laser ablation technique [23], disc shaped Mn doped ZnO sample [24], ZnO pellet [25] and ZnO thin film prepared by rf magnetron sputtering [26,27]. On the other hand, the another type of hopping conduction model, variable range hopping (VRH) related to dc conduction, was observed for Co doped ZnO [28], single ZnO nanowires [29], ZnO thin film prepared with sol-gel technique [30], ZnO thin films deposited by pulsed laser deposition [31], ZnO thin film post-annealed in H 2 after being prepared by solgel technique [32] and ZnO films prepared by chemical vapors deposition [33,34].…”

Section: Electrical Characterizationmentioning

confidence: 58%

“…However the frequency at the peaks of the semicircles increases with increase in temperature. Similarly, a semicircular arc was obtained for ZnO thin films [35], different dopant in ZnO [36], Mn doped ZnO thin film [24], ZnO pellet [25] and Li-doped ZnO thin film prepared by using pulsed laser ablation technique [37]. Dc and ac conductivity parameters, binding energies, relaxation time and exponent s parameter for all samples are summarized in table 4 at the indicated temperature.…”

Section: Electrical Characterizationmentioning

confidence: 89%

Structure and electrical properties of Mg‐doped ZnO nanoparticles

Kılınç¹,

Arda²,

Öztürk³

et al. 2010

Cryst. Res. Technol.

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Mg x Zn 1-x O (x=0.01-0.3) nanoparticles were synthesized by the sol-gel technique using solutions of Mg and Zn based organometalic compounds. The electrical properties of Mg doped zinc oxide (ZnO) were studied within wide temperature range from 300 to 500 K under the N 2 gas flow (flow rate: 20 sccm) and in the frequency range from 40 Hz to 1 MHz for ac electrical measurements. The dc conductivities and the activation energies were found to be in the range of 10 -9 -10 -6 S/cm at the room temperature and 0.26-0.86 eV respectively depending on doping rate of these samples. The ac conductivity was well represented by the power law Aω s . The conduction mechanism for all doped ZnO could be related to correlated barrier hopping (CBH) model. The complex impedance plots (Nyquist plot) showed the data points lying on a single semicircle, implying the response originated from a single capacitive element corresponding to the nanoparticle grains. The crystal structures of the Mg x Zn 1-x O nanoparticles were characterized using X-ray diffraction. The calculated average particle sizes values of Zn 1-x Mg x O samples are found between 29.72 and 22.43 nm using the Sherrer equation.

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“…Madelung energy, which is the electrostatic contribution to the binding energy of ionic compounds, decreases with donor doping while acceptor doping increases it. But donor-acceptor pair codoping decreases it because the strong acceptor-donor interaction overcomes the repulsive interactions between the acceptors and reduce the Madelung energy and hence ensures the incorporation of acceptors by forming acceptordonor-acceptor complex in the forbidden gap 15 . Thus B-N codoping improves the delocalization of impurity states at the acceptors and stabilizes the ionic charge distribution in the semiconductor.…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…Codoping of ZnO with group III and group V elements can be utilized to improve the acceptor solubility and thereby making acceptor levels shallower 7 . A few reports are available in the literature studying the feasibility of Al-N codoping 8 , In-N codoping [9][10][11] , B-N codoping 12 , Ga-N codoping 13 , Ag-N codoping 14 , Sn-N codoping 15 etc. in order to improve the p type electrical performance of ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

Narayanan

Deepak

2017

Mat. Res.

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The success of codoping by donor-acceptor impurities in accomplishing p type ZnO thin films deposited by spray pyrolysis technique is reported here. Monodoping ZnO with N altered the conductivity type but the resistivity is too high making it practically impossible to be useful in optoelectronic applications. B-N codoping increased the carrier concentration and obtained comparatively low resistivity because codoping enhanced the acceptor incorporation by forming acceptor-donor-acceptor complex in the band gap. XRD analysis revealed the dependence of dopant incorporation on the texture and microstructure of the films. XPS analysis confirmed the enhancement of N incorporation with codoping. Energy gap value increased for codoped films due to the Burstein-Moss effect, arising from the increase in carrier concentration. Hence the present work envisages the preparation of transparent p type ZnO thin films suitable for tandem thin film solar cells and also for other optoelectronic applications.

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Studies on ac response of zinc oxide pellets

Cited by 53 publications

References 32 publications

Study of dielectric relaxation processes in printable zinc oxide films on transparent substrates

Study of dielectric relaxation processes in printable zinc oxide films on transparent substrates

Structure and electrical properties of Mg‐doped ZnO nanoparticles

B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

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