Studies on dielectric relaxation and defect generation for reliability assessments in ultrathin high-k gate dielectrics on Ge

Charge trapping and reliability characteristics of sputtered Y2O3high-kdielectrics on N- and S-passivated germanium

“…This state corresponds to adsorbed sulfur atoms occupying the bridged site between neighboring Ge atoms. Figure 2 shows the core level spectra of S2p and N1s at 162.4 eV and 398.5 eV, respectively, confirms the presence of sulfur and nitrogen after sulfidation (with H 2 S and (NH 4 ) 2 S) and nitridation (with NO plasma) of Ge surfaces, and the observed binding energies are very close to the reported results [16,17]. Figure 3 illustrates the O1s and Y3d photoelectron spectra of the as-grown film.…”

Theoretical Investigation of Ge(100) Nitridation by Nitric Oxide: Monomeric or Dimeric Dissociation?

“…To completely search nondissociative precursors of NO on Ge(100), we considered 30 initial adsorption structures in Figure 1a−d. The initial adsorbing sites include dimer atoms (1,2), troughes between dimers (3,4) or between dimer rows (5,6,7), and the bridge of dimers (8) in Figure 1a. NO stands on each position with two possible orientations: N-attached vertically on the surface (NT1−NT8) or O-attached (OT1− OT8, Figure 1b).…”

“…Germanium oxynitride (GeO x N y ) is a promising candidate because it is able to improve the stability of the Ge substrate against thermal and wet treatment, , to suppress the diffusion of Ge into the high-κ metal-oxide layer, and to reduce the leakage current . The most straightforward method to grow germanium oxynitride is to anneal Ge substrates in plasma or wet atmosphere of nitric oxide. − This method does not induce unwanted foreign elements, thus the synthesized germanium oxynitride is of high purity. However, compared to other nitridation gases, the nitridation efficiency, evaluated by the N incorporation ratio of nitric oxide, is still low .…”