Studies on fully transparent Al–Sn–Zn–O thin-film transistors fabricated on glass at low temperature

Abstract

High-performance fully transparent Al-Sn-Zn-O thin-film transistors (ATZO TFTs) with excellent electrical performance have been successfully fabricated by RF magnetron sputtering on glass at low temperatures. Two kinds of appropriate ATZO compositions are compared from several perspectives, including film material characteristics, device electrical performances, and fabrication process conditions. Finally, we achieve two excellent ATZO TFTs with competitive advantages. The ATZO TFT with larger amounts of dopants exhibits a superior field effect mobility μ FE of 102.38 cm 2 V %1 s %1 , an ON/OFF current ratio (I on /I off ) of 1.18 ' 10 7 , and a threshold voltage V T of 1.35 V. The device with smaller amounts of dopants demonstrates better crystal quality and an excellent subthreshold swing SS of 155 mV/dec. Furthermore, it is less affected by oxygen partial pressure. The ATZO thin films display a high transmittance of over 80% in the visible light range.

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

“…7c has one prominent peak at 34.3°, indicating Sn atoms can successfully replace Zn sites in the lattice and form C-axis-aligned crystalline (CAAC). [39][40][41] The average grain size of the TZO film is estimated to be 17.1 nm using the Scherer formula, this can also be confirmed by the SEM image shown in Fig. 7d.…”

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

“…For that, over the last several years, there has been great interest in TFTs made of TCOs-based TAOSs thin films. Recently, several n-type TAOSs thin films, such as ZnO [ 4 ], Al-Sn-Zn-O (ASZO) [ 5 ], and In-Ga-Zn-O (IGZO) [ 6 ], have received a considerable attention in the large-area FPD industry since they may overcome the difficulties encountered in the amorphous α-Si:H and polycrystalline silicon TFTs technologies [ 7 ].…”