Studies on process induced optoelectronic and structural modifications of CdS/CZTS heterojunction interface affecting solar cell efficiency

Thankalekshmi, Ratheesh R.; Rastogi, A. C.

doi:10.1109/pvsc.2015.7355887

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…The CZTS films synthesized on Mo and FTO display other kesterite CZTS peaks at ~ 283 cm -1 and 473 cm -1 , which are in agreement with the previous report [30,40]. However, the difference in peaks intensity is well observed and could be related to different reasons.…”

Section: Raman Spectroscopysupporting

confidence: 91%

Growth of Cu2ZnSnS4 thin film absorber layer on transparent conductive oxides and molybdenum substrates by electrodeposition for photovoltaic application

Azmi

Layachi

Ouardi

et al. 2022

Optik

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Section: Raman Spectroscopysupporting

confidence: 91%

Growth of Cu2ZnSnS4 thin film absorber layer on transparent conductive oxides and molybdenum substrates by electrodeposition for photovoltaic application

Azmi

Layachi

Ouardi

et al. 2022

Optik

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“…[72][73][74] The use of annealed CZTS films as the light absorbing layer have shown improvied efficiencies compared to the non-annealed films. [75][76][77][78] There are variety of reported chemical treatments which have been shown to improve the efficiency. [79][80][81] Although in the present investigation the obtained device efficiency is low, it is important to note that the absorber layers were not further processed after deposition with any high-temperature or chemical treatments.…”

Section: Optical Properties Of Czts and Ccts Nanocrystals (Ncs)mentioning

confidence: 99%

Solution-processed Cd-substituted CZTS nanocrystals for sensitized liquid junction solar cells

Rondiya

Jadhav

Živković

et al. 2022

Journal of Alloys and Compounds

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Fabrication and characteristics of high‐V_OC single‐crystalline Cu₂ZnSnSe₄ solar cells

Lloyd

McCandless

Birkmire

2020

Progress in Photovoltaics

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Cu2ZnSnSe4 single‐crystal solar cells with open‐circuit voltages reaching 450 mV are demonstrated. The key differences in performance between high‐ and low‐voltage cells are analyzed and compared with state‐of‐the‐art thin film devices. Copper‐poor absorbers of two different compositions were evaluated as a function of surface treatment. Temperature‐dependent JV measurements were used to assess the efficacy of interface passivation. Crystals with lower copper content are shown to require more aggressive chemical treatments to achieve the maximal benefits than does their higher‐Cu counterparts. Hole concentration is confirmed via Hall characterization, with smaller densities corresponding to lower Cu concentration. In conjunction with poor lifetimes, these carrier densities are shown to limit collection at long wavelength, which reduces current in single‐crystal devices. The decrease in Cu concentration is also shown to increase the bandgap from 0.98 to 1.03 eV while maintaining the same level of subbandgap absorption. Postfabrication device annealing was shown to benefit devices with higher Cu/Zn + Sn ratios but hinder devices further deviating from stoichiometry, which is attributed to pn‐junction degradation.

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Studies on process induced optoelectronic and structural modifications of CdS/CZTS heterojunction interface affecting solar cell efficiency

Cited by 3 publications

References 14 publications

Growth of Cu2ZnSnS4 thin film absorber layer on transparent conductive oxides and molybdenum substrates by electrodeposition for photovoltaic application

Growth of Cu2ZnSnS4 thin film absorber layer on transparent conductive oxides and molybdenum substrates by electrodeposition for photovoltaic application

Solution-processed Cd-substituted CZTS nanocrystals for sensitized liquid junction solar cells

Fabrication and characteristics of high‐V_OC single‐crystalline Cu₂ZnSnSe₄ solar cells

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Studies on process induced optoelectronic and structural modifications of CdS/CZTS heterojunction interface affecting solar cell efficiency

Cited by 3 publications

References 14 publications

Growth of Cu2ZnSnS4 thin film absorber layer on transparent conductive oxides and molybdenum substrates by electrodeposition for photovoltaic application

Growth of Cu2ZnSnS4 thin film absorber layer on transparent conductive oxides and molybdenum substrates by electrodeposition for photovoltaic application

Solution-processed Cd-substituted CZTS nanocrystals for sensitized liquid junction solar cells

Fabrication and characteristics of high‐VOC single‐crystalline Cu2ZnSnSe4 solar cells

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Fabrication and characteristics of high‐V_OC single‐crystalline Cu₂ZnSnSe₄ solar cells