Studies on spin coated PANI/PMMA composite thin film: Effect of post-deposition heating

Yadav, J.B.; Patil, Rahul B.; Puri, Rajeev K.; Puri, Vijaya

doi:10.1016/j.apsusc.2008.08.015

Cited by 20 publications

(5 citation statements)

References 17 publications

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“…The very strong peak at 1504 cm -1 is associated with N-B-N stretching vibrations (where B refers to benzenoid ring). The peaks observed in the present work well matches with Pani [5][6][7][8][9][10] Figure 1(b & c) shows all the characteristics peak of Pani with some slight spectral intensity changes. The strong peaks at 2926cm -1 are assigned to asymmetric and symmetric stretching vibration mode of methyl groups [7].…”

Section: Ft-ir Analysissupporting

confidence: 74%

Synthesis, Characterization and Electrical Properties of Nano Metal and Metal-Oxide Doped with Conducting Polymer Composites by in-Situ Chemical Polymerization

Senthilkumar¹,

Rajendran²

2017

MOJPS

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Section: Ft-ir Analysissupporting

confidence: 74%

Synthesis, Characterization and Electrical Properties of Nano Metal and Metal-Oxide Doped with Conducting Polymer Composites by in-Situ Chemical Polymerization

Senthilkumar¹,

Rajendran²

2017

MOJPS

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“…C–C stretching appears around 1570 cm −1 is due to an oxidation state of PANI. 25 The band at 800 cm −1 shows C–Cl aromatics out of a plane bend. The peak at 1298 cm −1 is due to C–N stretch of a benzenoid ring.…”

Section: Resultsmentioning

confidence: 99%

Effect of dopant concentration on polyaniline/poly(4-styrene sulfonic acid) composite for ammonia gas detection

Jayamurugan

Mariappan²,

Deivanayaki³

et al. 2019

Polymers and Polymer Composites

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Polyaniline (PANI)/poly(4-styrene sulfonic acid) (PSS) has been prepared for various molar ratios of hydrochloric acid (HCl) (1, 2, 3 and 4 M, respectively) through in situ chemical polymerization method. The reaction temperature was 25°C for 3 h. Fourier transform infrared spectroscopy spectrum confirms the attachment of the structure to functional groups. The intensity of PANI is increased with increasing HCl concentration. Scanning electron microscopic graphs reveal the irregular morphology. The complex impedance of the PANI/PSS shows two distinguished semicircles and the diameter of the arcs decreased with an increase in ammonia concentration at room temperature. The sensitivity of the sensor increased with time, and the maximum sensitivity is 7.4 at 3 M of HCl for 500 ppm. The results are discussed and reported.

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“…• C so as improve the adhesion and load uniformity [65] but not to severely degrade the PAni conductivity, while the micropillars were embossed. PAni conformally coats the pillars contributing to a conducting semiconductor-polymer interface, and the evaporated metal layer enhances the conductance of the bottom electrode.…”

Section: Resultsmentioning

confidence: 99%

Harvesting and Transferring Vertical Pillar Arrays of Single-Crystal Semiconductor Devices to Arbitrary Substrates

Logeeswaran

Katzenmeyer

Islam

2010

IEEE Trans. Electron Devices

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Abstract-Development of devices that can be fabricated on amorphous substrates using multiple single-crystal semiconductors with different physical, electrical, and optical characteristics is important for highly efficient portable and flexible electronics, optoelectronics, and energy conversion devices. Reducing the use of single-crystal substrates can contribute to low-cost and environmentally benign devices covering a large area. We demonstrate a technique to harvest and transfer vertically aligned single-crystal semiconductor micro-and nanopillars from a singlecrystal substrate to a low-cost carrier substrate while simultaneously preserving the integrity, order, shape, and fidelity of the transferred pillar arrays. The transfer technique facilitates multilayer process integration by exploiting a vertical embossing and lateral fracturing method using a spin-coated polymer layer on a carrier substrate. Electrical contacts are formed using a bilayer of metal and conducting polymer such as gold (Au) and polyaniline (PAni). In this method, the original single-crystal substrate can be repeatedly used for generating more devices and is minimally consumed, whereas in conventional fabrication methods, the substrate is employed solely as a mechanical support. This heterogeneous integration technique potentially offers devices with low physical fill factor contributing to lower leakage current and noise, reduced parasitic capacitance, and enhanced photon-semiconductor interactions, and enables heterogeneous multimaterial integration such as silicon with compound semiconductors for rapidly expanding large-scale applications, including low-cost and flexible electronics, displays, tactile sensors, and energy conversion systems.Index Terms-Compound semiconductors, heterogeneous material integration, integrated multifunctional devices, micro/ nano-pillars, photon traps, vertical device arrays, 3-D material integration.

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Studies on spin coated PANI/PMMA composite thin film: Effect of post-deposition heating

Cited by 20 publications

References 17 publications

Synthesis, Characterization and Electrical Properties of Nano Metal and Metal-Oxide Doped with Conducting Polymer Composites by in-Situ Chemical Polymerization

Synthesis, Characterization and Electrical Properties of Nano Metal and Metal-Oxide Doped with Conducting Polymer Composites by in-Situ Chemical Polymerization

Effect of dopant concentration on polyaniline/poly(4-styrene sulfonic acid) composite for ammonia gas detection

Harvesting and Transferring Vertical Pillar Arrays of Single-Crystal Semiconductor Devices to Arbitrary Substrates

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