Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy

Tawil, Siti Nooraya Mohd; Krishnamurthy, Daivasigamani; Kakimi, Rina; Emura, S.; Hasegawa, Shigehiko; Asahi, H.

doi:10.1016/j.jcrysgro.2010.11.166

Cited by 11 publications

(8 citation statements)

References 15 publications

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“…In particular, plasmas are commonly used in the growth of ultra-thin epitaxial semiconducting layers for the generation of atomic nitrogen through the effective dissociation of nitrogen molecules. One example is the plasma-assisted molecularbeam epitaxy of complex InGaGdN/GaN magnetic semiconductor superlattice structures [270].…”

Section: Other 2d Nanomaterialsmentioning

confidence: 99%

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

Ostrikov

Neyts

Meyyappan

2013

Advances in Physics

498

391

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The unique plasma-specific features and physical phenomena in the organization of nanoscale solid-state systems in a broad range of elemental composition, structure, and dimensionality are critically reviewed. These effects lead to the possibility to localize and control energy and matter at nanoscales and to produce self-organized nano-solids with highly unusual and superior properties. A unifying conceptual framework based on the control of production, transport, and self-organization of precursor species is introduced and a variety of plasmaspecific non-equilibrium and kinetics-driven phenomena across the many temporal and spatial scales is explained. When the plasma is localized to micrometer and nanometer dimensions, new emergent phenomena arise. The examples range from semiconducting quantum dots and nanowires, chirality control of single-walled carbon nanotubes, ultra-fine manipulation of graphenes, nano-diamond, and organic matter, to nano-plasma effects and nano-plasmas of different states of matter. Contents

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Section: Other 2d Nanomaterialsmentioning

confidence: 99%

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

Ostrikov

Neyts

Meyyappan

2013

Advances in Physics

498

391

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“…Tawil et al grew InGaN:Gd layers using PA-MBE on GaN (0001) templates. 33,34 Growth at 400°C produced an In content up to 28% and 35% and C Gd levels ∼1 at. %.…”

Section: Magnetic Properties Of Iii-n:rementioning

confidence: 99%

Dilute Magnetic III-N Semiconductors Based on Rare Earth Doping

Hite¹,

Zavada²

2019

ECS J. Solid State Sci. Technol.

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This paper focuses on the magnetic properties of wide bandgap III-N semiconductors doped with rare earth elements. Such materials form a novel class of dilute magnetic semiconductors that have an important potential impact on future information processing devices. In particular, rare earth doped III-N thin films may lead to integration of electronic, optical, and magnetic functionality for computation, sensing, and communication applications. The main aspects of this paper concern the efficient incorporation of rare earth ions in III-N thin films and the demonstration of magnetic effects at room temperature. While early studies were based on ion implantation and solid-state diffusion, major advances have been achieved through molecular beam epitaxy and metal-organic chemical vapor deposition. Measurements of room temperature magnetic effects from III-N films doped with rare earth elements, including erbium, gadolinium, europium, neodymium, and thulium, are presented. The dependence of measured magnetic properties on the synthesis method, co-doping, and material defects are addressed.

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“…RE elements, such as Gd, may introduce additional capabilities to the ZnO system because they may be capable of constructing combined practical devices on a single chip by combining magnetic and optical properties (Ohno et al 1996;Tawil et al 2011).…”

Section: Introductionmentioning

confidence: 99%

Electronic, structural and optical properties of Gd-doped ZnO powder synthesized by solid-state reaction method

Gora

Kumar

Choudhary

et al. 2023

Bangladesh J. Sci. Ind. Res.

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We explored the impact of Gd doping on the structural, electronic and optical characteristics of the ZnO powder. The Gd-doped ZnO (0, 2% and 5%) powder samples have been synthesized using the conventional solid-state reaction process with varied Gd concentrations. The XRD pattern confirmed that all the studied samples are in the hexagonal wurtzite crystalline structure. The morphology has been explored using SEM images, which exhibited an agglomerated rod-like particle structure. The XPS results indicate the presence of oxygen vacancies (Vo) in the Gd-doped ZnO samples and the Vo’s are found to increase with increasing Gd amount. According to PL findings, the intensity ratio of the green and ultra-violet emission peaks is found to increase from 0.090 to 0.418 with increasing Gd-doping concentrations, confirming that Vo’s are increasing with Gd-doping. The UV-visible spectroscopy results reveal that the energy band gap (Eg) decreased from 3.31 eV to 3.23 eV with increasing Gd-doping concentration. Bangladesh J. Sci. Ind. Res. 58(1), 53-64, 2023

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Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy

Cited by 11 publications

References 15 publications

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

Dilute Magnetic III-N Semiconductors Based on Rare Earth Doping

Electronic, structural and optical properties of Gd-doped ZnO powder synthesized by solid-state reaction method

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